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參數(shù)資料
| 型號： | MTB50P03HDLT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 182K |
| 代理商： | MTB50P03HDLT4 |
MTB50P03HDL
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk ≥ 2.0) (3)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
26
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
10
Adc
Gate–Body Leakage Current
(VGS = ±15 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(Cpk ≥ 3.0) (3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
1.5
4.0
2.0
—
Vdc
mV/
°C
Static Drain–Source On–Resistance
(Cpk ≥ 3.0) (3)
(VGS = 5.0 Vdc, ID = 25 Adc)
RDS(on)
—
20.9
25
mOhm
Drain–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 50 Adc)
(ID = 25 Adc, TJ =125°C)
VDS(on)
—
0.83
—
1.5
1.3
Vdc
Forward Transconductance
(VDS = 5.0 Vdc, ID = 25 Adc)
gFS
15
20
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Ciss
—
3500
4900
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
1550
2170
Transfer Capacitance
f = 1.0 MHz)
Crss
—
550
770
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(V
15 Vd
I
50 Ad
td(on)
—
22
30
ns
Rise Time
(VDD= 15 Vdc, ID = 50 Adc,
VGS =5 0Vdc
tr
—
340
466
Turn–Off Delay Time
VGS = 5.0 Vdc,
RG = 2.3 )
td(off)
—
90
117
Fall Time
G
)
tf
—
218
300
Gate Charge
(See Figure 8)
(V
24 Vd
I
50 Ad
QT
—
74
100
nC
(See Figure 8)
(VDS = 24 Vdc, ID = 50 Adc,
Q1
—
13.6
—
( DS
, D
,
VGS = 5.0 Vdc)
Q2
—
44.8
—
Q3
—
35
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 50 Adc, VGS = 0 Vdc)
(IS = 50 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
2.39
1.84
3.0
—
Vdc
Reverse Recovery Time
(See Figure 15)
(I
50 Ad
V
0 Vd
trr
—
106
—
ns
(See Figure 15)
(IS = 50 Adc, VGS = 0 Vdc,
ta
—
58
—
( S
,
GS
,
dIS/dt = 100 A/s)
tb
—
48
—
Reverse Recovery Stored Charge
QRR
—
0.246
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
3.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB50P03HDLT4G | 功能描述:MOSFET PFET D2PAK 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB50SA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB50SAM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB50SAV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB50SAVM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
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