參數(shù)資料
型號(hào)： MTB50N06VLT4
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D2PAK-3
文件頁數(shù)： 5/12頁
文件大小： 100K
代理商： MTB50N06VLT4
MTB50N06VL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = .25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
–
64
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
–
10
100
Adc
Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.4
4.3
2.0
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (VGS = 5 Vdc, ID = 21 Adc)
RDS(on)
–
0.025
0.032
Ohms
Drain–to–Source On–Voltage
(VGS = 5 Vdc, ID = 42 Adc)
(VGS = 5 Vdc, ID = 21 Adc, TJ = 150°C)
VDS(on)
–
1.2
–
1.6
1.5
Vdc
Forward Transconductance (VDS = 6 Vdc, ID = 20 Adc)
gFS
17
28
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
1570
2200
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
508
710
Transfer Capacitance
f = 1.0 MHz)
Crss
–
135
270
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
td(on)
–
16
30
ns
Rise Time
(VDD = 30 Vdc, ID = 42 Adc,
VGS = 5 Vdc
tr
–
355
701
Turn–Off Delay Time
VGS = 5 Vdc,
RG = 9.1 )
td(off)
–
80
160
Fall Time
RG 9.1 )
tf
–
160
320
Gate Charge
(S
Fi
8)
QT
–
40
60
nC
(See Figure 8)
(VDS = 48 Vdc, ID = 42 Adc,
Q1
–
11
–
(VDS 48 Vdc, ID 42 Adc,
VGS = 5 Vdc)
Q2
–
20
–
Q3
–
16
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 42 Adc, VGS = 0 Vdc)
(IS = 42 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
–
1.03
0.94
2.5
–
Vdc
Reverse Recovery Time
trr
–
91.1
–
ns
(IS =42Adc VGS = 0 Vdc
ta
–
63.8
–
(IS = 42 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
–
27.3
–
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
–
0.299
–
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
–
3.5
4.5
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
–
7.5
–
nH
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料
PDF描述
MTB50N06VL 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB50P03HDLT4 50 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET
MTB52N06VLT4 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB52N06VL 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB52N06VLT4G 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTB50N06VT4 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R
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MTB50P03HDLG 功能描述:MOSFET PFET 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTB50P03HDLT4 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTB50P03HDLT4G 功能描述:MOSFET PFET D2PAK 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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