參數(shù)資料
型號： MTB50N06V
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418B-04, D2PAK-3
文件頁數(shù)： 3/7頁
文件大?。?/td> 207K
代理商： MTB50N06V
MTB50N06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
5 V
100
80
60
40
20
0
0.8
0
9
7
5
3
1
VDS ≥ 10 V
TJ = 55°C
100°C
25°C
VGS = 10 V
0.04
20
0
0.034
0.01
40
60
80
100
TJ = 100°C
25°C
55°C
TJ = 25°C
0.033
0.021
0
VGS = 10 V
15 V
VGS = 10 V
ID = 21 A
2
1.5
1
0.5
0
50
25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125°C
1000
1
0
1020
30405060
1.6
2.4
3.2
4
100
80
60
40
20
0
246
8
0.028
0.022
0.016
0.03
0.027
0.024
20
40
60
80
100
10
100°C
25°C
175
2.5
相關(guān)PDF資料
PDF描述
MTB50N06VT4 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB55N06ZT4 55 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB55N10EL 55 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB55N10ELT4 55 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB60N10E7L 60 A, 100 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTB50N06VL 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK Rail
MTB50N06VLT4 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R
MTB50N06VT4 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R
MTB50P03HDL 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTB50P03HDLG 功能描述:MOSFET PFET 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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