參數(shù)資料
型號(hào)： MTB36N06VT4
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D2PAK-3
文件頁(yè)數(shù)： 4/10頁(yè)
文件大?。?/td> 241K
代理商： MTB36N06VT4
MTB36N06V
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
0
1
2
3
0
18
72
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
1
3
5
7
9
0
18
54
72
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
18
36
72
0.02
0.06
0.04
0.1
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
36
54
72
0.028
0.036
0.044
0.052
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
0.8
1.2
1.6
1.8
0
10
20
40
50
60
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
– 25
0
25
50
75
100
125
150
VGS = 10 V
ID = 16 A
TJ = 25°C
VGS = 10 V
9 V
8 V
6 V
5 V
7 V
VGS = 10 V
TJ = 100°C
25
°C
– 55
°C
25
°C
TJ = 25°C
VGS = 10 V
15 V
VGS = 0 V
TJ = 125°C
36
54
4
36
54
18
30
VDS ≥ 10 V
TJ = 100°C
–55
°C
4 V
2
4
6
8
0.08
0
1
1.4
1000
1
100
°C
25
°C
175
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