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參數(shù)資料
| 型號： | MTB36N06VT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 258K |
| 代理商： | MTB36N06VT4 |
MTB36N06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
01
2
3
0
18
72
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
13
5
7
9
0
18
54
72
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
018
36
72
0.02
0.06
0.04
0.1
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
036
54
72
0.028
0.036
0.044
0.052
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0.6
0.8
1.2
1.6
1.8
0
1020
4050
60
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
VGS = 10 V
ID = 16 A
TJ = 25°C
VGS = 10 V
9 V
8 V
6 V
5 V
7 V
VGS = 10 V
TJ = 100°C
25°C
55°C
25°C
TJ = 25°C
VGS = 10 V
15 V
VGS = 0 V
TJ = 125°C
36
54
4
36
54
18
30
VDS ≥ 10 V
TJ = 100°C
55°C
4 V
2
46
8
0.08
0
1
1.4
1000
1
100°C
25°C
175
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