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參數(shù)資料
| 型號： | MTB36N06E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 36 AMPERES 60 VOLTS |
| 中文描述： | 36 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-02, D2PAK-3 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 278K |
| 代理商： | MTB36N06E |
1
Motorola TMOS Power MOSFET Transistor Device Data
$#
" "!
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This advanced
TMOS E–FET is designed to withstand high energy in the
avalanche and commutation modes. The new energy efficient
design also offers a drain–to–source diode with a fast recovery
time. Designed for low voltage, high speed switching applications in
power supplies, converters and PWM motor controls, these
devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional safety margin against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
ID
ID
IDM
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
60
Vdc
±
20
Vdc
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
36
22
144
Amps
Apk
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C, when mounted with the minimum recommended pad size
PD
100
0.80
2.5
Watts
W/
°
C
Watts
Operating and Storage Temperature Range
TJ, Tstg
EAS
– 55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vpk, IL = 36 Apk, L = 0.34 mH, RG = 25
)
220
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient, when mounted with the minimum recommended pad size
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.25
62.5
50
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTB36N06E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
36 AMPERES
60 VOLTS
RDS(on) = 0.04 OHM
Motorola Preferred Device
CASE 418B–02, Style 2
D2PAK
D
S
G
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| MTB36N06V | TMOS POWER FET 32 AMPERES 60 VOLTS |
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| MTB4N80E | TMOS POWER FET 4.0 AMPERES 800 VOLTS |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MTB36N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R |
| MTB3N120E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK Rail |
| MTB3N120ET4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R |
| MTB3N60E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTB3N60ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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