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參數資料
| 型號： | MTB30N06VL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數： | 7/10頁 |
| 文件大?。?/td> | 259K |
| 代理商： | MTB30N06VL |
MTB30N06VL
http://onsemi.com
6
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
TA, AMBIENT TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 13. Thermal Response
0.1
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 14. Diode Reverse Recovery Waveform
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1
Figure 15. D2PAK Power Derating Curve
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
10
100
1000
1
dc
100 μs
1 ms
10 ms
10 μs
t, TIME (s)
1.00
0.10
0.01
0.2
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.02
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
AV
ALANCHE
ENERGY
(mJ)
25
50
75
100
125
ID = 30 A
150
0
60
40
20
140
80
100
120
175
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
P
D
,POWER
DISSIP
ATION
(W
ATTS)
RθJA = 50°C/W
Board material = 0.065 mil FR4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
175
160
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相關代理商/技術參數 |
參數描述 |
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| MTB30N06VLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) D2PAK T/R |
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| MTB30P06V | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK Rail |
| MTB30P06VG | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK Rail |
| MTB30P06VT4 | 功能描述:MOSFET 60V 30A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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