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參數(shù)資料
| 型號： | MTB2N60E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 2.0 AMPERES 600 VOLTS |
| 中文描述： | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 271K |
| 代理商： | MTB2N60E |
1
Motorola TMOS Power MOSFET Transistor Device Data
#"
! !
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
600
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
600
Vdc
— Non–Repetitive (tp
≤
10 ms)
±
20
±
40
Vdc
Vpk
Drain Current — Continuous
— Continuous @ 100
°
C
— Single Pulse (tp
≤
10
μ
s)
2.0
1.3
7.0
Adc
Apk
Total Power Dissipation @ 25
°
C
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
50
0.4
2.5
Watts
W/
°
C
Watts
TJ, Tstg
EAS
– 55 to 150
°
C
mJ
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 50 Vdc, VGS = 10 Vdc, Peak IL = 2.0 Apk, L = 95 mH, RG = 25
)
Thermal Resistance — Junction to Case
— Junction to Ambient
— Junction to Ambient (1)
190
R
θ
JC
R
θ
JA
R
θ
JA
TL
2.5
62.5
50
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
260
°
C
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTB2N60E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
2.0 AMPERES
600 VOLTS
RDS(on) = 3.8 OHM
Motorola Preferred Device
CASE 418B–02, Style 2
D2PAK
D
S
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB2P50E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 500 VOLTS |
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| MTB2P50ET4G | 功能描述:MOSFET PFET 500V 2A 6O RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB306D | 功能描述:撥動開關(guān) 3PDT TOGGLE SWITCH Long Bat Actuator RoHS:否 制造商:C&K Components 觸點形式:DPDT 開關(guān)功能:ON - ON - ON 電流額定值: 電壓額定值 AC:20 V 電壓額定值 DC:20 V 功率額定值:0.4 VA 端接類型:V-Bracket 安裝風(fēng)格: 端子密封:Epoxy 觸點電鍍:Gold 照明:Not Illuminated |
| MTB306D04 | 制造商:TE Connectivity 功能描述:Switch Toggle ON None ON 3PDT Bat Toggle Wire Lug 6A 250VAC 28VDC Panel Mount with Threads |
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