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參數(shù)資料
| 型號(hào)： | MTB20N20ET4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 258K |
| 代理商： | MTB20N20ET4 |
MTB20N20E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
1
3
5
7
9
0
10
20
30
40
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
8.5
0
10
20
30
40
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
4
16
24
36
40
0.05
0.10
0.25
0.30
0.35
0
4
12
20
32
40
0.10
0.11
0.13
0.15
0.17
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0.4
1.2
1.6
2.0
2.4
0
200
1
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VGS = 10 V
ID = 10 A
–25
0
25
50
75
100
125
150
TJ = 25°C
VGS = 10 V
VDS ≥ 10 V
TJ = –55°C
25
°C
100
°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
2
4
6
8
10
9 V
6 V
7 V
8 V
35
25
15
5
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
TJ = 100°C
25
°C
– 55
°C
0.15
0.20
8
12
20
28
32
0.16
0.14
0.12
8
16
24
28
36
0.8
25
°C
100
°C
50
100
150
TJ = 125°C
VGS = 10 V
15 V
5 V
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