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參數(shù)資料
| 型號： | MTB16N25E-T4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 259K |
| 代理商： | MTB16N25E-T4 |
MTB16N25E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
Figure 15. D2PAK Power Derating Curve
RθJA = 50°C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size 9 450 mils x 350 mils
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
0.1
1.0
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
100
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
100
ID = 16 A
10
150
300
200
400
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
s
100
s
1 ms
10 ms
dc
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
D = 0.5
0.00001
0.0001
0.01
0.1
1.0
0.01
0.001
0.1
10
1.0
t, TIME (s)
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