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參數(shù)資料
| 型號(hào)： | MTB1306T4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 176K |
| 代理商： | MTB1306T4 |
MTB1306
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
ON–RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.25
0.75
1.25
1.5
2.0
0
75
125
150
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
20
40
80
0
0.001
0.003
0.005
0.007
20
40
90
0.004
0.005
0.006
0.007
0.008
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0
0.5
2.0
10
15
20
25
30
10
100
1000
10,000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
–25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = –55°C
TJ = 100°C
TJ = 25°C
50
100
0.5
1.0
1.75
25
VGS = 10 V
0
60
160
180
40
140
20
2.0
2.5
3.0
3.5
4.0
4.5
0.006
0.004
0.002
60
100
140
60
80
100
1.5
VGS = 10 V
ID = 38 A
1.0
5.0
TJ = 125°C
100
°C
0.008
0.009
0.010
0.009
5.0 V
4.0 V
120
100
80
125
°C
25
°C
120
25
°C
–55
°C
30
50
70
150
120
140
130
110
VGS = 5.0 V
10 V
VGS ≥ 10 V
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PDF描述 |
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| MTB1306T4 | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| MTB30N06ELT4 | 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB50N06ET4 | 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB1-30PAL2-01 | 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 30 POS 1.27mm Solder RA Thru-Hole |
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