參數(shù)資料
型號: MT6L75FS
元件分類: 小信號晶體管
英文描述: 2 CHANNEL, UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 2-1F1A, FS6, 6 PIN
文件頁數(shù): 2/3頁
文件大小: 36K
代理商: MT6L75FS
MT6L75FS
2005-06-13
2
ELECTRICAL CHARACTERISTICS Q1 (Ta = 25°C)
CHARACTERISTICS
SYMBOL
C O N D I T I O N
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
1
A
DC Current Gain
hFE
VCE = 1 V, IC = 5 mA
70
140
Reverse Transfer Capacitance
Cre (Note)
VCB = 1 V, IE = 0, f = 1 MHz
0.4
0.65
pF
Transition Frequency
fT
VCE = 3 V, IC = 10 mA
10
12
GHz
S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz
8
Insertion Gain
S21e2 (2) VCE = 3 V, IC = 15 mA, f = 2 GHz
7.5
10
dB
Noise Figure
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.5
3
dB
ELECTRICAL CHARACTERISTICS Q2 (Ta = 25°C)
CHARACTERISTICS
SYMBOL
C O N D I T I O N
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
0.5
A
DC Current Gain
hFE
VCE = 1 V, IC = 5 mA
110
160
Reverse Transfer Capacitance
Cre (Note)
VCB = 1 V, IE = 0, f = 1 MHz
0.5
0.7
pF
Transition Frequency
fT
VCE = 1 V, IC = 10 mA
6.5
8.5
GHz
S21e2 (1) VCE = 1 V, IC = 10 mA, f = 2 GHz
8
Insertion Gain
S21e2 (2) VCE = 3 V, IC = 20 mA, f = 2 GHz
8
10
dB
Noise Figure
NF
VCE = 1 V, IC = 10 mA, f = 2 GHz
1.2
2
dB
Note : Cre is measured by 3 terminal method capacitance bridge.
Caution
This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of
fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
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