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參數(shù)資料
| 型號(hào)： | MT6L58AFS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-1F1A, FS6, 6 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 69K |
| 代理商： | MT6L58AFS |
MT6L58AFS
2007-11-01
2
Electrical Characteristics Q1 (Ta
= 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 5 V, IE = 0
0.1
μA
Emitter cutoff current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
70
140
Reverse transfer capacitance
Cre(Note)
VCB = 1 V, IE = 0, f = 1 MHz
0.25
0.5
pF
Transition frequency
fT
VCE = 3 V, IC = 5 mA
7
10
GHz
S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz
8.5
Insertion gain
S21e2 (2) VCE = 3 V, IC = 7 mA, f = 2 GHz
7
9.5
dB
Noise figure
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz
1.7
3
dB
Electrical Characteristics Q2 (Ta
= 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 5 V, IE = 0
0.1
μA
Emitter cutoff current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
80
160
Reverse transfer capacitance
Cre(Note)
VCB = 1 V, IE = 0, f = 1 MHz
0.75
1
pF
Transition frequency
fT
VCE = 3 V, IC = 10 mA
7
10
GHz
S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz
5.5
Insertion gain
S21e2 (2) VCE = 3 V, IC = 20 mA, f = 2 GHz
6
8.5
dB
Noise figure
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.7
3
dB
Note: Cre is measured with a three-terminal method using a capacitance bridge.
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
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