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參數(shù)資料
| 型號： | MT6L57AT |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SUPER MINI, 2-2JA1C, TU6, 6 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 137K |
| 代理商： | MT6L57AT |
MT6L57AT
2007-11-01
2
Electrical Characteristics Q1 (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
70
140
Transition frequency
fT
VCE = 3 V, IC = 5 mA
7
10
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
7.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 7 mA, f = 2 GHz
4.5
8
dB
NF (1)
VCE = 1 V, IC = 3 mA, f = 2 GHz
1.7
3
Noise figure
NF (2)
VCE = 3 V, IC = 3 mA, f = 2 GHz
1.6
3
dB
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note)
0.35
0.75
pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
Electrical Characteristics Q2 (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
80
160
fT (1)
VCE = 1 V, IC = 5 mA
2
4.5
Transition frequency
fT (2)
VCE = 3 V, IC = 7 mA
5
7
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
8.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 20 mA, f = 1 GHz
7.5
11
dB
NF (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
1.3
2.2
Noise figure
NF (2)
VCE = 3 V, IC = 7 mA, f = 1 GHz
1.2
2
dB
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note)
0.9
1.25
pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
相關(guān)PDF資料 |
PDF描述 |
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| MT6L58AE | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT6L58AFS | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT6L58AS | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT6L58AT | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT6L58AT | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT6L58AE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
| MT6L58AE_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
| MT6L58AFS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low-Noise Amplifier Applications |
| MT6L61AT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
| MT6L63FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low-Noise Amplifier Applications |
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