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參數(shù)資料
| 型號： | MT58L64L18F |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| 中文描述： | 64K的× 18，3.3V的I / O的流量通過SyncBurst的SRAM（1兆，3.3V的輸入/輸出，流通式同步脈沖靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 9/17頁 |
| 文件大?。?/td> | 327K |
| 代理商： | MT58L64L18F |
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F.p65 – Rev. 9/99
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
9
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Supply Relative to V
SS
-0.5V to +4.6V
Voltage on V
DD
Q Supply
Relative to V
SS
............................... -0.5V to +4.6V
V
IN
-0.5V to V
DD
Q + 0.5V
Storage Temperature (plastic) ............ -55oC to +150oC
Junction Temperature**................................... +150oC
Short Circuit Output Current ...........................100mA
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Maximum junction temperature depends upon pack-
age type, cycle time, loading, ambient temperature and
airflow. See Micron Technical Note TN-05-14 for more
information.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0oC
≤
T
A
≤
+70oC; V
DD
, V
DD
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
CONDITIONS
SYMBOL
V
IH
V
IL
IL
I
IL
O
MIN
2.0
-0.3
-1.0
-1.0
MAX
V
DD
+ 0.3
0.8
1.0
1.0
UNITS
V
V
μA
μA
NOTES
1, 2
1, 2
3
0V
≤
V
IN
≤
V
DD
Output(s) disabled,
0V
≤
V
IN
≤
V
DD
I
OH
= -4.0mA
I
OL
= 8.0mA
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
V
OH
V
OL
V
DD
V
DD
Q
2.4
–
3.135
3.135
–
V
V
V
V
1, 4
1, 4
1
1, 5
0.4
3.6
V
DD
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Overshoot:
Undershoot:
Power-up:
3. MODE pin has an internal pull-up, and input leakage = ±10μA.
4. The load used for V
OH
, V
OL
testing is shown in Figure 2. AC load current is higher than the stated DC values. AC I/O
curves are available upon request.
5. V
DD
Q should never exceed V
DD
. V
DD
and V
DD
Q can be connected together.
V
IH
≤
+4.6V for t
≤
t
KC /2 for I
≤
20mA
V
IL
-0.7V for t
≤
t
KC /2 for I
≤
20mA
V
IH
≤
+3.6V and V
DD
≤
3.135V for t
≤
200ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT58L32L32F | 32K x 32， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L36F | 32K x 36， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出，流通式同步脈沖靜態(tài)RAM) |
| MT58L64L18P | 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L32L32P | 32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L32L36P | 32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L64L18F-8.5A | 制造商:Micron Technology Inc 功能描述: |
| MT58L64L18FT-10 | 制造商:Cypress Semiconductor 功能描述: |
| MT58L64L18FT-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L64L18FT-8.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L64L18FT-8.5 TR | 制造商:Cypress Semiconductor 功能描述:64KX18 SRAM PLASTIC 3.3V FLOW |
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