參數(shù)資料
型號: MT58L32L32F
廠商: Micron Technology, Inc.
英文描述: 32K x 32, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM)
中文描述: 32K的× 32,3.3V的I / O的流量通過SyncBurst的SRAM(1兆,3.3V的輸入/輸出,流通式同步脈沖靜態(tài)內(nèi)存)
文件頁數(shù): 13/17頁
文件大小: 327K
代理商: MT58L32L32F
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F.p65 – Rev. 9/99
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
13
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
SNOOZE MODE
SNOOZE MODE is a low-current, “power-down”
mode in which the device is deselected and current is
reduced to I
SB
2
Z
. The duration of SNOOZE MODE is
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all inputs
except ZZ become gated inputs and are ignored.
The ZZ pin is an asynchronous, active HIGH input
that causes the device to enter SNOOZE MODE. When
the ZZ pin becomes a logic HIGH, I
SB
2
Z
is guaranteed
after the setup time
t
ZZ is met. Any access pending
when the device enters SNOOZE MODE is not guaran-
teed to complete successfully. Therefore, SNOOZE
MODE must not be initiated until valid pending opera-
tions are completed.
SNOOZE MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
CONDITIONS
ZZ
V
IH
SYMBOL
I
SB
2Z
t
ZZ
t
RZZ
t
ZZI
t
RZZI
MIN
MAX
10
t
KC
UNITS
mA
ns
ns
ns
ns
NOTES
1
1
1
1
t
KC
t
KC
0
NOTE:
1. This parameter is sampled.
SNOOZE MODE WAVEFORM
tZZ
I
SUPPLY
CLK
ZZ
I
SB2
ALL INPUTS*
* Except ZZ
DON’T CARE
tZZI
tRZZ
tRZZI
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PDF描述
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