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參數(shù)資料
| 型號： | MT58L128V18F |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM) |
| 中文描述： | 128K的× 18，流量通過SyncBurst的SRAM（處理器，流通式同步脈沖靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 2/24頁 |
| 文件大?。?/td> | 459K |
| 代理商： | MT58L128V18F |
2
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOTE:
Functional Block Diagrams illustrate simplified device operation. See truth table, pin descriptions and timing diagrams for
detailed information.
FUNCTIONAL BLOCK DIAGRAM
128K x 18
ADDRESS
REGISTER
ADV#
CLK
BINARY
COUNTER AND
LOGIC
CLR
Q1
Q0
ADSC#
17
17
15
17
CE#
CE2
CE2#
18
ENABLE
REGISTER
18
2
OE#
SENSE
128K x 9 x 2
ARRAY
ADSP#
9
9
OUTPUT
BUFFERS
INPUT
REGISTERS
9
9
18
18
2
MODE
GW#
BWE#
SA0, SA1, SA
BWb#
BWa#
BYTE “b”
WRITE REGISTER
BYTE “a”
WRITE REGISTER
SA0'
SA1'
SA0-SA1
DQs
DQPa
DQPb
BYTE “b”
WRITE DRIVER
BYTE “a”
WRITE DRIVER
ADDRESS
REGISTER
ADV#
CLK
BINARY
COUNTER
AND LOGIC
CLR
Q1
Q0
ADSP#
ADSC#
16
16
14
16
CE#
CE2
CE2#
OE#
ENABLE
REGISTER
4
SENSE
AMPS
OUTPUT
BUFFERS
INPUT
REGISTERS
64K x 8 x 4
(x32)
64K x 9 x 4
(x36)
MEMORY
ARRAY
MODE
BWE#
GW#
BYTE “d”
WRITE REGISTER
BYTE “c”
WRITE REGISTER
BYTE “b”
WRITE REGISTER
BYTE “a”
WRITE REGISTER
DQs
DQPa
DQPb
DQPc
DQPd
BYTE “b”
WRITE DRIVER
BYTE “c”
WRITE DRIVER
BYTE “d”
WRITE DRIVER
9
9
36
36
36
36
9
9
9
9
9
9
BWd#
BWc#
SA0, SA1, SA
BWb#
BWa#
SA0'
SA1'
SA0-SA1
BYTE “a”
WRITE DRIVER
FUNCTIONAL BLOCK DIAGRAM
64K x 32/36
相關(guān)PDF資料 |
PDF描述 |
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| MT58L64L32F | 64K x 32,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM) |
| MT58L64L36F | 64K x 36,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM) |
| MT58L128L18P | 128K x 18, Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128V18P | 128K x 18, Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L64L32P | 64K x 32,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L128V18FT-10 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128V18FT-6.8 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128V18FT-7.5 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128V18FT-8.5 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128V18PT-7.5 | 制造商:Micron Technology Inc 功能描述: |
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