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參數(shù)資料
| 型號： | MT58L128L18D |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 128K x 18,3.3V I/O, Pipelined, Double-Cycle Deselect，SyncBurst SRAM(2Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)RAM) |
| 中文描述： | 128K的x 18,3.3六/ O的流水線，雙循環(huán)取消，SyncBurst的SRAM（處理器，3.3V的輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 18/24頁 |
| 文件大?。?/td> | 432K |
| 代理商： | MT58L128L18D |
18
2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L128L18D_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
PIPELINED, DCD SYNCBURST SRAM
SNOOZE MODE
SNOOZE MODE is a low-current, “power-down”
mode in which the device is deselected and current is
reduced to I
SB
2
Z
. The duration of SNOOZE MODE is
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all inputs
except ZZ become gated inputs and are ignored.
The ZZ pin is an asynchronous, active HIGH input
that causes the device to enter SNOOZE MODE. When
the ZZ pin becomes a logic HIGH, I
SB
2
Z
is guaranteed
after the setup time
t
ZZ is met. Any READ or WRITE
operation pending when the device enters SNOOZE
MODE is not guaranteed to complete successfully.
Therefore, SNOOZE MODE must not be initiated until
valid pending operations are completed.
SNOOZE MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
CONDITIONS
ZZ
3
V
IH
SYMBOL
I
SB
2
Z
t
ZZ
t
RZZ
t
ZZI
t
RZZI
MIN
MAX
10
2(
t
KC)
UNITS
mA
ns
ns
ns
ns
NOTES
1
1
1
1
2(
t
KC)
2(
t
KC)
0
NOTE:
1. This parameter is sampled.
SNOOZE MODE WAVEFORM
tZZ
I
SUPPLY
CLK
ZZ
tRZZ
ALL INPUTS
(except ZZ & PD)
DON’T CARE
IISB2Z
tZZI
tRZZI
Outputs (Q)
High-Z
DESELECT or READ Only
PD
相關PDF資料 |
PDF描述 |
|---|---|
| MT58L64L32D | 64K x 32，3.3V I/O, Pipelined, Double-Cycle Deselect，SyncBurst SRAM(2Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)RAM) |
| MT58L128L18F | 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM) |
| MT58L128V18F | 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM) |
| MT58L64L32F | 64K x 32,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM) |
| MT58L64L36F | 64K x 36,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L128L18DT-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128L18F | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128L18F10 | 制造商:MICRON 功能描述:* |
| MT58L128L18F-10A | 制造商:Micron Technology Inc 功能描述: |
| MT58L128L18FT-10 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
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