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參數(shù)資料
| 型號： | MT55V1MV18P |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步靜態(tài)存儲器) |
| 中文描述： | 16Mb的：1梅格× 18，流量通過ZBT SRAM的（16Mb的流通式同步靜態(tài)存儲器） |
| 文件頁數(shù)： | 21/34頁 |
| 文件大?。?/td> | 460K |
| 代理商： | MT55V1MV18P |
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21
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1M18P_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
SNOOZE MODE
SNOOZE MODE is a low-current, “power-down”
mode in which the device is deselected and current is
reduced to I
SB
2
Z
. The duration of SNOOZE MODE is
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all inputs
except ZZ become disabled and all outputs go to
High-Z.
The ZZ pin is an asynchronous, active HIGH input
that causes the device to enter SNOOZE MODE.
When the ZZ pin becomes a logic HIGH, I
SB
2
Z
is guaran-
teed after the time
t
ZZI is met. Any READ or WRITE
operation pending when the device enters SNOOZE
MODE is not guaranteed to complete successfully.
Therefore, SNOOZE MODE must not be initiated until
valid pending operations are completed. Similarly, when
exiting SNOOZE MODE during
t
RZZ, only a DESELECT
or READ cycle should be given.
SNOOZE MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
CONDITIONS
ZZ
3
V
IH
SYMBOL
I
SB
2Z
t
ZZ
t
RZZ
t
ZZI
t
RZZI
MIN
MAX
10
2(
t
KHKH)
2(
t
KHKH)
2(
t
KHKH)
UNITS
mA
ns
ns
ns
ns
NOTES
0
0
1
1
1
1
0
SNOOZE MODE WAVEFORM
tZZ
I
SUPPLY
CLK
ZZ
tRZZ
ALL INPUTS
(except ZZ)
DON’T CARE
IISB2Z
tZZI
tRZZI
Outputs (Q)
High-Z
DESELECT or READ Only
NOTE:
1. This parameter is sampled.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT55L512L18F | 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256L32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256L36F | 8Mb: 256K x 36，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256V32F | 8Mb: 256K x 32，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
| MT55L256V36F | 8Mb: 256K x 36，F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT55V1MV18PT-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT55V512V32FT-8.8 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55V512V32PF-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55V512V32PF-6 | 制造商:Rochester Electronics LLC 功能描述: |
| MT55V512V32PT-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
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