參數(shù)資料
型號: MT55L256L32F
廠商: Micron Technology, Inc.
英文描述: 8Mb: 256K x 32,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
中文描述: 8MB的:256K × 32,流量通過ZBT SRAM的(8兆流通式同步靜態(tài)存儲器)
文件頁數(shù): 12/25頁
文件大小: 380K
代理商: MT55L256L32F
12
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FUNCTION
READ
WRITE Byte “a”
WRITE Byte “b”
WRITE Byte “c”
WRITE Byte “d”
WRITE All Bytes
WRITE ABORT/NOP
R/W#
H
L
L
L
L
L
L
BWa#
X
L
H
H
H
L
H
BWb#
X
H
L
H
H
L
H
BWc#
X
H
H
L
H
L
H
BWd#
X
H
H
H
L
L
H
FUNCTION
READ
WRITE Byte “a”
WRITE Byte “b”
WRITE All Bytes
WRITE ABORT/NOP
R/W#
H
L
L
L
L
BWa#
X
L
H
L
H
BWb#
X
H
L
L
H
INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH)
FIRST ADDRESS (EXTERNAL)
X...X00
X...X01
X...X10
X...X11
SECOND ADDRESS (INTERNAL)
X...X01
X...X00
X...X11
X...X10
THIRD ADDRESS (INTERNAL)
X...X10
X...X11
X...X00
X...X01
FOURTH ADDRESS (INTERNAL)
X...X11
X...X10
X...X01
X...X00
LINEAR BURST ADDRESS TABLE (MODE = LOW)
FIRST ADDRESS (EXTERNAL)
X...X00
X...X01
X...X10
X...X11
SECOND ADDRESS (INTERNAL)
X...X01
X...X10
X...X11
X...X00
THIRD ADDRESS (INTERNAL)
X...X10
X...X11
X...X00
X...X01
FOURTH ADDRESS (INTERNAL)
X...X11
X...X00
X...X01
X...X10
PARTIAL TRUTH TABLE FOR READ/WRITE COMMANDS (x18)
NOTE:
Using R/W# and byte write(s), any one or more bytes may be
written.
NOTE:
Using R/W# and byte write(s), any one or more bytes may be written.
PARTIAL TRUTH TABLE FOR READ/WRITE COMMANDS (x32/x36)
相關(guān)PDF資料
PDF描述
MT55L256L36F 8Mb: 256K x 36,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
MT55L256V32F 8Mb: 256K x 32,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
MT55L256V36F 8Mb: 256K x 36,F(xiàn)low-Through ZBT SRAM(8Mb流通式同步靜態(tài)存儲器)
MT55L64L32F1 64K x 32,3.3V I/O, ZBT SRAM(2Mb,3.3V輸入/輸出,靜態(tài)RAM)
MT55L64L36F1 64K x 36,3.3V I/O, ZBT SRAM(2Mb,3.3V輸入/輸出,靜態(tài)RAM)
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