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參數(shù)資料
| 型號： | MT4S101T |
| 廠商： | Toshiba Corporation |
| 英文描述： | UHF LOW NOISE AMPLIFIER APPLICATION |
| 中文描述： | 超高頻低噪聲放大器的應(yīng)用 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 119K |
| 代理商： | MT4S101T |
MT4S101T
2 02-06-04
Microwave Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
V
CE
=2V, I
C
=7mA, f=2GHz
18
23
-
GHz
Insertion Gain
|S21e|
2
V
CE
=2V, I
C
=7mA, f=2GHz
14.5
17
-
dB
Noise Figure
NF
V
CE
=2V, I
C
=5mA, f=2GHz
-
0.8
1.05
dB
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
I
CBO
V
CB
=6V, I
E
=0
-
-
1
μA
Emitter Cut-off Current
I
EBO
V
EB
=1V, I
C
=0
-
-
1
μA
DC Current Gain
hFE
V
CE
=2V, I
C
=7mA
200
-
400
-
Output Capacitance
C
ob
V
CB
=2V, I
E
=0, f=1MHz
-
0.34
0.6
pF
Reverse Transistor Capacitance
C
re
V
CB
=2V, I
E
=0, f=1MHz (Note 1)
-
0.10
0.2
pF
Note 1:
Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
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