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參數(shù)資料
| 型號(hào)： | MT4S07U |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2K1A, USQ, 4 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | MT4S07U |
MT4S07U
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S07U
VHF~UHF Band Low Noise Amplifier Applications
Low Noise Figure: NF = 1.5dB
(VCE = 3 V, IC = 5 mA, f = 2 GHz)
High Gain: |S21e|2 = 10.5dB
(VCE = 3 V, IC = 15 mA, f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
1.5
V
Collector current
IC
25
mA
Base current
IB
10
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2K1A
Weight: 0.006 g (typ.)
Type name
A D
2
1
3
4
USQ
1. Emitter1(E1)
2.Base(B)
3.Emitter2(E2)
4.Collector(C)
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| MT4S07 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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