參數(shù)資料
型號: MT48LC8M16A2FC-7ELIT
廠商: Micron Technology, Inc.
英文描述: SYNCHRONOUS DRAM
中文描述: 同步DRAM
文件頁數(shù): 17/59頁
文件大?。?/td> 1822K
代理商: MT48LC8M16A2FC-7ELIT
17
128Mb: x4, x8, x16 SDRAM
128MSDRAM_E.p65
Rev. E; Pub. 1/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
128Mb: x4, x8, x16
SDRAM
This is shown in Figure 7 for CAS latencies of two and
three; data element
n
+ 3 is either the last of a burst of four
or the last desired of a longer burst. The 128Mb SDRAM
uses a pipelined architecture and therefore does not
require the 2
n
rule associated with a prefetch architec-
Figure 7
Consecutive READ Bursts
ture. A READ command can be initiated on any clock
cycle following a previous READ command. Full-speed
random read accesses can be performed to the same
bank, as shown in Figure 8, or each subsequent READ
may be performed to a different bank.
NOTE:
Each READ command may be to any bank. DQM is LOW.
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK,
COL
n
NOP
BANK,
COL
b
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
D
OUT
b
READ
X
= 1 cycle
CAS Latency = 2
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK,
COL
n
NOP
BANK,
COL
b
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
D
OUT
b
READ
NOP
T7
X
= 2 cycles
CAS Latency = 3
DON
T CARE
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