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| 型號(hào)： | MT46V32M4TG-75Z |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | DOUBLE DATA RATE DDR SDRAM |
| 中文描述： | 雙倍數(shù)據(jù)速率的DDR SDRAM內(nèi)存 |
| 文件頁(yè)數(shù)： | 41/68頁(yè) |
| 文件大小： | 2547K |
| 代理商： | MT46V32M4TG-75Z |
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41
128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65
–
Rev. C; Pub. 4/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
128Mb: x4, x8, x16
DDR SDRAM
PRELIMINARY
TRUTH TABLE 4
–
CURRENT STATE BANK
n
–
COMMAND TO BANK
m
(Notes: 1-6; notes appear below and on next page)
CURRENT STATE CS# RAS# CAS# WE#
Any
H
L
Idle
X
Row
L
Activating,
L
Active, or
L
Precharging
L
Read
L
(Auto-
L
Precharge
L
Disabled)
L
Write
L
(Auto-
L
Precharge
L
Disabled)
L
Read
L
(With Auto-
L
Precharge)
L
L
Write
L
(With Auto-
L
Precharge)
L
L
COMMAND/ACTION
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any Command Otherwise Allowed to Bank m
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
NOTES
X
H
X
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
X
H
X
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
X
H
X
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
7
7
7
7, 9
7,8
7
7, 3a
7, 9, 3a
7, 3a
7, 3a
NOTE:
1. This table applies when CKE
n-1
was HIGH and CKE
n
is HIGH (see Truth Table 2) and after
t
XSNR has been
met (if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted (i.e., the current state is for bank
n
and
the commands shown are those allowed to be issued to bank
m,
assuming that bank
m
is in such a state
that the given command is allowable). Exceptions are covered in the notes below.
(Notes continue on next page)
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|---|---|
| MT46V32M4TG-75ZL | DOUBLE DATA RATE DDR SDRAM |
| MT46V32M4TG-8 | DOUBLE DATA RATE DDR SDRAM |
| MT46V32M4TG-8L | DOUBLE DATA RATE DDR SDRAM |
| MT46V4M32 | DOUBLE DATA RATE DDR SDRAM |
| MT46V4M32LG | I.MX31 LITE KIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT46V32M4TG-75ZL | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V32M4TG-8 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V32M4TG-8L | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V32M8 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V32M82ZZ5-75 ES | 制造商:Micron Technology Inc 功能描述:32MX8 SDRAM DDR PLASTIC PBF FBGA 2.5V - Trays |
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