參數(shù)資料
型號(hào): MT46H128M32L2JV-54AT:A
元件分類(lèi): DRAM
英文描述: 128M X 32 DDR DRAM, 5 ns, PBGA168
封裝: 12 X 12 MM, GREEN, PLASTIC, VFBGA-168
文件頁(yè)數(shù): 35/106頁(yè)
文件大?。?/td> 3431K
Figure 17: Typical Self Refresh Current vs. Temperature
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
-40
-30
-20
-10
0
15
30
45
60
75
90
Temperature ('C)
C
u
rr
ent
(A
)
Full Array
1/2 Array
1/4 Array
1/8 Array
1/16 Array
2Gb: x16, x32 Mobile LPDDR SDRAM
Electrical Specifications – IDD Parameters
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
34
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
相關(guān)PDF資料
PDF描述
MT46H128M32L4CM-5AT:A 128M X 32 DDR DRAM, 5 ns, PBGA90
MT46H128M32L4KQ-75:A 128M X 32 DDR DRAM, 6 ns, PBGA168
MT46H128M32L4MA-54:A 128M X 32 DDR DRAM, 5 ns, PBGA168
MT46H128M32LFCM-5AT:A 128M X 32 DDR DRAM, 5 ns, PBGA90
MT46H128M32LFCM-5IT:A 128M X 32 DDR DRAM, 5 ns, PBGA90
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述