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參數(shù)資料
| 型號(hào)： | MT3S108FS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | K BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-1E1A, FSM, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | MT3S108FS |
MT3S108FS
2007-11-01
2
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
VCE=1V, IC=10mA
10.5
13
-
GHz
|S21e|
2(1)
VCE=1V, IC=5mA, f=2GHz
-
9
-
dB
Insertion Gain
|S21e|
2(2)
VCE=3V, IC=10mA, f=2GHz
9.5
11.5
-
dB
Noise Figure
NF
VCE=1V, IC=7mA, f=2GHz
-
0.9
1.5
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
ICBO
VCB=5V, IE=0
-
0.1
A
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
-
0.5
A
DC Current Gain
hFE
VCE=1V, IC=5mA
75
-
125
-
Reverse Transistor Capacitance
Cre
VCB=1V, IE=0, f=1MHz (Note 1)
-
0.3
0.45
pF
Note 1:
Cre is measured by 3 terminal method with capacitance Bridge.
Caution:
This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of
fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
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