參數(shù)資料
型號: MT3S05T
廠商: Toshiba Corporation
英文描述: TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
中文描述: 硅晶體管型瑞展
文件頁數(shù): 2/3頁
文件大小: 86K
代理商: MT3S05T
MT3S05T
2002-01-23
2
Microwave Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
f
T
V
CE
1 V, I
C
5 mA
2
4.5
GHz
|S21e|
2
(1)
|S21e|
2
(2)
V
CE
1 V, I
C
5 mA, f 1 GHz
8.5
Insertion gain
V
CE
3 V, I
C
20 mA, f 1 GHz
8.5
11.5
dB
Noise figure
NF
V
CE
1 V, I
C
5 mA, f 1 GHz
1.4
2.2
dB
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
5 V, I
E
0
0.1
A
Emitter cut-off current
I
EBO
V
EB
1 V, I
C
0
1
A
DC current gain
h
FE
V
CE
1 V, I
C
5 mA
80
140
Reverse transfer capacitance
C
re
V
CB
1 V, I
E
0, f 1 MHz
(Note)
0.9
1.25
pF
Note: C
re
is measured by 3 terminal method with capacitance bridge.
Caution
This device electrostatic sensitivity. Please handle with caution.
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