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參數(shù)資料
| 型號： | MT28C128532W18EFW-F705-P856KBTWT |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA77 |
| 封裝： | FBGA-77 |
| 文件頁數(shù)： | 4/15頁 |
| 文件大小： | 158K |
| 代理商： | MT28C128532W18EFW-F705-P856KBTWT |
128Mb MULTIBANK BURST FLASH
32Mb/64Mb BURST CellularRAM COMBO
PRELIMINARY
09005aef80b10a55
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28C128564W18E_B.fm - Rev. B, Pub 11/03 EN
12
2003 Micron Technology. Inc.
Electrical Specifications
NOTE:
1. Stresses greater than those listed in Table 5 may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. See technical note TN-00-15 for more information.
Table 4:
Absolute Maximum Ratings
Note 1
PARAMETERS/CONDITIONS
MIN
MAX
UNITS
NOTES
Operating Temperature Range
-25
+85
°C
Storage Temperature Range
-55
+125
°C
Soldering Cycle
+260
°C
Table 5:
Recommended Operating Conditions
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
VCC Supply Voltage (F_VCC and C_VCC)
VCC
1.70
–
1.95
V
I/O Supply Voltage
VccQ (W18)
1.70
–
2.24
V
VccQ (W30)
2.20
3.30
Table 6:
Capacitance
TA = +25°C; f = 1 MHz
PARAMETER/CONDITION
SYMBOL
TYP
MAX
UNITS
Input Capacitance
CIN
13
17
pF
Output Capacitance
COUT
18
20
pF
Clock Capacitance
CCLK
22
23
pF
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