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參數(shù)資料
| 型號： | MSV40075-T86 |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | KU BAND, 1.98 pF, 60 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 594K |
| 代理商： | MSV40075-T86 |
Revision Date: 10/05/05
60 V Silicon Varactor Diodes
MSV40,000 Series
Description
The work horse of varactors these diodes are built tough with
fully passivated mesa construction and Aeroex / Metelics tri-
metallization. Featuring a nominal gamma of 0.46 these diodes
nd application in tunable lters and oscillators up to 18 GHz.
Features
0 to 60 Volt tuning voltage
Tuning ratios up to 6.5 (typical)
Screening per MIL-PRF-19500
and MIL-PRF-35834 available
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
60 V
Forward Current
100 mA
Power Dissipation
Chip
E28, E28X & 0805-2
H20, P55 & T86
250 mW at T
C = 25 °C, derate linearly to zero at TC = +200 °C
100 mW at T
A = 25 °C, derate linearly to zero at TA = +150 °C
100 mW at T
A = 25 °C, derate linearly to zero at TA = +200 °C
Operating Temperature
Chip
E28, E28X & 0805-2
H20, P55 & T86
-65
°C to +200 °C
-65
°C to +150 °C
-65
°C to +200 °C
Storage Temperature
Same as operating temperature.
Soldering Temperature
Chip
Packaged
+320
°C for 10 seconds
+260
°C peak per JEDEC J-STD-20C
Chip
Electrical Specifications, T
A = 25 °C
Model
V
BR
MIN
V
CJ
Tuning Ratio
Q
MIN
R
S
MAX
Outline
MIN
pF
NOM
pF
MAX
pF
MIN
MAX
MSV40,060
60
0.36
0.4
0.44
5.0
5.5
3,000
2.7
C12
MSV40,064
60
0.54
0.6
0.66
5.0
5.5
2,600
2.0
C12
MSV40,067
60
0.72
0.8
0.88
5.0
5.5
2,600
1.6
C12
MSV40,069
60
0.90
1.0
1.10
6.0
6.5
2,400
1.2
C12
MSV40,075
60
1.62
1.8
1.98
6.0
6.5
2,200
0.8
C12
MSV40,082
60
3.42
3.8
4.18
6.0
6.5
1,500
0.5
C12
MSV40,087
60
5.22
5.8
6.38
6.0
6.5
1,500
0.4
C12
MSV40,092
60
8.82
9.8
10.78
6.0
6.5
1,500
0.3
C22
Test Conditions
I
R =
10 A
V
R = 4 V
F = 1 MHz
V
R = 0 V & VR = 60 V
F = 1 MHz
V
R = 4 V
F = 50
MHz
F = 1 GHz
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