參數(shù)資料
型號(hào)： MSS50,CR53-B49
元件分類： 射頻混頻器
英文描述： SILICON, MIXER DIODE
封裝： CASE B49, 4 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 91K
代理商： MSS50,CR53-B49
Revision Date: 05/23/05
The Aeroex / Metelics MSS CR Series of Schottky crossover
quad diodes are fabricated on N-Type epitaxial substrates using
proprietary processes that yield the highest FCOs in the industry.
Barrier heights for LO power levels from 3 dBm to +17 dBm are
available..
Five different barrier heights
Beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Description
Features
MSS CR Series
Silicon Schottky Crossover Quad Diodes
r
Absolute Maximum Ratings
Beam Lead
Electrical Specifications, T
A = 25 C
Model
V
F
TYP
mV
C
J
TYP
pF
C
J
MAX
pF
R
D
TYP
R
D
MAX
Outline
MSS30, CR46-B49
280
0.09
0.125
15
22
B49
MSS30, CR53-B49
260
0.15
0.250
10
15
B49
MSS40, CR46-B49
470
0.09
0.125
15
22
B49
MSS40, CR53-B49
430
0.15
0.250
10
15
B49
Test
Conditions
I
F = 1mA
V
R = 0 V
R
F = 1MHz
I
F = 5 mA
Parameters
Rating
Reverse Voltage
Rated V
BR
Forward Current
50 mA
Operation Temperature
-65 C to +150 C
Storage Temperature
-65 C to +150 C
Power Dissipation
100 mW per junction at T
A
T = 25 C, derate
A
linearly to zero at T
A
T = +150 C
Soldering Temperature (Packaged)
+ 260 C for 5 sec.
Beam Lead Pull Strength
4 grams minimum
相關(guān)PDF資料
PDF描述
MSS60,144-B10B SILICON, HIGH BARRIER SCHOTTKY, MIXER DIODE
MSS60,148-B10B SILICON, HIGH BARRIER SCHOTTKY, MIXER DIODE
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MSS60,846-E45 SILICON, HIGH BARRIER SCHOTTKY, MIXER DIODE
MBR20H100CTP 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
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