參數(shù)資料
型號： MSS40,244-E35
元件分類： 射頻混頻器
英文描述： SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE
封裝： CERAMIC, CASE E35, 3 PIN
文件頁數(shù)： 4/4頁
文件大?。?/td> 185K
代理商： MSS40,244-E35
Revision Date: 05/20/05
Aeroex / Metelics
Aeroex Microelectronic Solutions
975 Stewart Drive, Sunnyvale, CA 94085
TEL: 408-737-8181
Fax: 408-733-7645
www.aeroex-metelics.com
sales@aeroex-metelics.com
Aeroex / Metelics, Inc. reserves the right to make changes to any products
and services herein at any time without notice. Consult Aeroex or an
authorized sales representative to verify that the information in this data
sheet is current before using this product. Aeroex does not assume any
responsibility or liability arising out of the application or use of any product
or service described herein, except as expressly agreed to in writing by
Aeroex; nor does the purchase, lease, or use of a product or service from
Aeroex convey a license under any patent rights, copyrights, trademark
rights, or any other of the intellectual rights of Aeroex or of third parties.
Copyright 2003 Aeroex / Metelics. All rights reserved.
attributes represented by these three icons:
solution-minded, performance-driven and customer-focused.
Outline Drawings
MSS40,000 Series
Medium Barrier Silicon Schottky Diodes
0
4
B
]
9
8
0
.
0
[
5
.
3
]
0
3
0
.
0
[
2
.
1
]
4
1
0
.
0
[
5
.
0
]
6
0
.
0
[
5
2
.
0
]
3
1
0
.
0
[
5
.
0
n
a
h
t
s
e
L
]
2
.
0
[
5
7
.
8
]
1
2
1
.
0
[
5
7
.
4
s
l
P
4
]
5
0
3
.
0
[
2
1
]
3
0
2
.
0
[
8
s
l
P
4
]
2
5
1
.
0
[
6
]
2
0
1
.
0
[
4
s
l
P
4
]
6
4
5
.
0
[
5
.
1
2
]
5
4
.
0
[
5
.
7
1
Q
S
k
c
a
B
w
e
i
V
k
c
a
B
L
C
L
C
1
4
B
]
9
8
0
.
0
[
5
.
3
]
0
3
0
.
0
[
2
.
1
]
4
1
0
.
0
[
5
.
0
]
6
0
.
0
[
5
2
.
0
]
3
1
0
.
0
[
5
.
0
n
a
h
t
s
e
L
]
6
1
2
.
0
[
5
.
8
]
0
4
1
.
0
[
5
.
5
s
l
P
4
]
1
2
1
.
0
[
5
7
.
4
]
3
8
0
.
0
[
5
2
.
3
s
l
P
4
]
3
4
3
.
0
[
5
.
3
1
]
7
6
2
.
0
[
5
.
0
1
Q
S
k
c
a
B
w
e
i
V
k
c
a
B
s
l
P
2
]
7
2
1
.
0
[
5
]
6
7
0
.
0
[
3
.
x
a
M
]
0
7
2
.
1
[
0
5
]
6
5
3
.
0
[
4
1
]
3
0
2
.
0
[
8
y
x
o
p
E
.
n
i
M
]
2
3
0
.
2
[
0
8
c
i
m
a
r
e
C
5
F
p
7
0
H
n
4
]
7
5
4
.
0
[
8
1
]
5
0
3
.
0
[
2
1
e
d
o
h
t
a
C
s
i
d
a
e
L
t
u
C
.
Q
S
]
7
9
3
.
1
[
5
]
3
4
1
.
1
[
5
4
18 [0.457] 3 Pls
12 [0.305]
50 [1.270] Max.
14 [0.356]
8[0.203]
Ceramic
Epoxy
80 [2.032] Min.
5 [0.127] 3 Pls
3 [0.076]
E35
Cp=0.07pF
Lp=0.4nH
55 [1.397] SQ.
45 [1.143]
18 [0.457] 4 Pls
12 [0.305]
50 [1.270] Max.
14 [0.356]
8 [0.203]
Ceramic
Epoxy
80 [2.032] Min.
5 [0.127] 4 Pls
3 [0.076]
E45
Cp=0.07pF
Lp=0.4nH
55 [1.397] SQ.
45 [1.143]
]
1
9
5
.
2
[
2
0
1
]
7
5
0
.
2
[
1
8
]
4
8
5
.
0
[
3
2
]
2
3
4
.
0
[
7
1
a
i
D
]
2
4
6
.
2
[
4
0
1
]
7
3
.
2
[
2
9
e
r
a
u
q
S
]
2
0
3
.
3
[
0
3
1
s
l
P
2
.
n
i
M
]
2
5
1
.
0
[
6
]
6
7
0
.
0
[
3
]
9
8
.
0
[
5
3
]
5
3
6
.
0
[
5
2
]
3
0
2
.
0
[
8
]
2
0
1
.
0
[
4
e
d
o
h
t
a
C
s
i
d
a
e
l
t
u
C
F
p
8
1
.
0
=
H
n
5
.
0
=
0
2
102 [2.591]
81 [2.057]
23 [0.584]
17 [0.432]
Dia
104 [2.642]
92 [2.337]
Square
130 [3.302]
Min. 3 Pls
6 [0.152]
3 [0.076]
35 [0.889]
25 [0.635]
8 [0.203]
4 [0.102]
Cut lead is Cathode
Cp=0.18pF
Lp=0.5nH
H30
102 [2.591]
81 [2.057]
23 [0.584]
17 [0.432]
Dia
104 [2.642]
92 [2.337]
Square
130 [3.302]
Min. 4 Pls
6 [0.152]
3 [0.076]
35 [0.889]
25 [0.635]
8 [0.203]
4 [0.102]
Cp=0.18pF
Lp=0.5nH
H40
]
7
9
3
.
1
[
5
]
3
4
1
.
1
[
5
4
]
7
9
3
.
1
[
5
]
5
9
2
.
1
[
1
5
.
a
i
D
Heatsink is anode
c
i
m
a
r
e
C
y
d
o
B
15 [0.381]
10 [0.254]
64 [1.626] Dia.
60 [1.524]
82 [2.083]
70 [1.778]
P86
Cp=0.15pF
Lp=1nH
64 [1.626]
60 [1.524]
210 [5.334]
190 [4.826]
84 [2.134] Dia.
78 [1.981]
Heatsink is anode
Ceramic
Body
(non-hermetic)
H20 (hermetic)
B40
B41
P55 (hermetic)
H30 (hermetic)
E25 (non-hermetic)
E35 (non-hermetic)
H45 (hermetic)
P86 (hermetic)
相關(guān)PDF資料
PDF描述
MSS40,248-E35 SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE
MSS50,244-E30 SILICON, HIGH BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE
MSS50,244-H30 SILICON, HIGH BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE
MSS50,448-B40 SILICON, HIGH BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE
MSS50,448-H40 SILICON, HIGH BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE
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