參數(shù)資料
型號(hào): MSS40-1200
廠商: 意法半導(dǎo)體
英文描述: BACK TO BACK SCR MODULE
中文描述: 背靠背可控硅模塊
文件頁數(shù): 1/5頁
文件大?。?/td> 150K
代理商: MSS40-1200
1/5
MSS40 / 50 Series
BACK TO BACK SCR MODULE
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Packaged in ISOTOP modules, the MSS40 /
MSS50 Series is based on two back-to-back SCR
configurations, providing high noise immunity.
They are suitable for high power applications such
as solid state relays, heating control systems,
welding equipment, motor control circuits...
The compactness of the ISOTOP package allows
high power density and optimized power bus
connections. Thanks to their internal ceramic pad,
they provide high voltage insulation (2500V
RMS),
complying with UL standards (File ref: E81734).
PIN CONNECTIONS
Symbol
Value
Unit
I
T(RMS)
55 and 70
A
V
DRM
/V
RRM
800 and 1200
V
I
GT
50
mA
ABSOLUTE RATINGS
(limiting values)
Symbol
Parameter
Value
Unit
MSS40
55
MSS50
I
T(RMS)
RMS on-state current
Tc = 80 °C
Tc = 85 °C
A
70
630
600
1800
I
TSM
Non repetitive surge peak on-state
current
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
Peak gate current
Average gate power dissipation
tp = 16.7 ms
tp = 20 ms
tp = 10 ms
Tj = 25°C
420
400
800
A
I
2
t
Tj = 25°C
A
2
S
dI/dt
F = 120 Hz
Tj = 125°C
50
A/μs
I
GM
P
G(AV)
T
stg
T
j
V
RGM
tp = 20 μs
Tj = 125°C
Tj = 125°C
4
1
A
W
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Maximum peak reverse gate voltage
5
V
A1
A2
G2
G1
ISOTOP
ISOTOP is a registred trademark of STMicroelectronics
A1
A2
G1
G2
1:Thyristor 2 Anode (A2)
2:Thyristor 2 Gate (G2)
3:Thyristor 1 Anode (A1)
4:Thyristor 1 Gate (G1)
4
1
3
2
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