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參數(shù)資料
| 型號： | MSS40,048-C15 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| 封裝： | CASE C15, 5 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 185K |
| 代理商： | MSS40,048-C15 |
Revision Date: 05/20/05
MSS40,000 Series
Medium Barrier Silicon Schottky Diodes
2
Aeroex / Metelics, Inc.
www.aeroex-metelics.com
Beam Lead
Electrical Specifications, T
A = 25 C
Packaged
Electrical Specifications, T
A = 25 C
Model
Conguration
V
F
TYP
V
BR
MIN
V
C
J
TYP / MAX
pF
R
S
TYP
R
D
MAX
F
CO
TYP
GHz
Outline
MSS40,141-B10B
Single Junction
0.42
3
0.06 / 0.10
10
22
265
B10B
MSS40,148-B10B
Single Junction
0.40
3
0.12 / 0.15
7
17
190
B10B
MSS40,155-B10B
Single Junction
0.38
3
0.25 / 0.30
5
13
127
B10B
MSS40,244-B20
Series Tee
0.44
3
0.08 / 0.12
19
22
105
B20
MSS40,248-B20
Series Tee
0.44
3
0.12 / 0.15
10
17133
B20
MSS40,255-B20
Series Tee
0.38
3
0.25 / 0.30
5
15
127
B20
MSS40,448-B41
Ring Quad
0.40
3
0.12 / 0.15
7
17
190
B41
MSS40,455-B40
Ring Quad
0.38
3
0.25 / 0.30
5
17
127
B40
Test
Conditions
I
F = 1 mA
I
R =
R
10 μA
V
R = 0 V
R
F = 1 MHz
I
F = 5 mA
Model
Conguration
V
F
TYP
V
BR
MIN
V
C
T
TYP / MAX
pF
R
S
TYP
R
D
MAX
F
CO
TYP
GHz
Outline
MSS40,045-P55
Single Junction
0.42
3
0.21 / 0.27
7
15
253
P55
MSS40,045-P86
Single Junction
0.42
3
0.24 / 0.30
715
253
P86
MSS40,048-P55
Single Junction
0.40
3
0.24 / 0.30
7
15
190
P55
MSS40,048-P86
Single Junction
0.40
3
0.27 / 0.33
715
190
P86
MSS40,141-E25
Single Junction
0.42
3
0.16 / 0.22
10
18
265
E25
MSS40,141-H20
Single Junction
0.42
3
0.24 / 0.30
10
18
265
H20
MSS40,148-E25
Single Junction
0.40
3
0.22 / 0.28
7
15
190
E25
MSS40,148-H20
Single Junction
0.40
3
0.30 / 0.36
7
15
190
H20
MSS40,155-E25
Single Junction
0.38
3
0.35 / 0.41
5
14
127E25
MSS40,155-H20
Single Junction
0.38
3
0.43 / 0.50
5
14
127
H20
MSS40,244-E35
Series Tee
0.44
3
0.18 / 0.24
19
28
105
E35
MSS40,248-E35
Series Tee
0.44
3
10
18
133
E35
MSS40,255-E35
Series Tee
0.38
3
0.35 / 0.41
5
14
127
E35
MSS40,448-E45
Ring Quad
0.40
3
0.24 / 0.30
7
15
190
E45
MSS40,455-E45
Ring Quad
0.38
3
0.32 / 0.38
5
14
127
E45
MSS40,455-H45
Ring Quad
0.38
3
0.42 / 0.48
5
14
127
H40
Test
Conditions
I
F = 1 mA
I
R =
R
10 μA
V
R = 0 V
F = 1 MHz
I
F = 5 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSS40,141-B10B | SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| MSS40,148-B10B | SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| MSS40,244-B20 | SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| MSS40,244-E35 | SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| MSS40,248-E35 | SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSS40-1200 | 功能描述:SCR模塊 55 Amp 1200 Volt RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| MSS40-1200 | 制造商:STMicroelectronics 功能描述:THYRISTOR MODULE 55A 1200V |
| MSS4020-103 | 制造商:Coilcraft Inc 功能描述:Power inductor, shielded, 20% tol, SMT, RoHS |
| MSS4020-103ML | 制造商:Coilcraft Inc 功能描述:Power inductor, shielded, 20% tol, SMT, RoHS |
| MSS4020-103MLB | 功能描述:固定電感器 Power Inductor 10 uH 20 % 1.15 A RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
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