參數(shù)資料
型號(hào)： MSS1P3L-G3/89A
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述： 1 A, 30 V, SILICON, SIGNAL DIODE
封裝： GREEN, PLASTIC, MICROSMP, 2 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 101K
代理商： MSS1P3L-G3/89A
New Product
MSS1P2L & MSS1P3L
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89020
Revision: 26-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 6.0 x 6.0 mm copper pad areas. RθJL is measured
at the terminal of cathode band. RθJC is measured at the top center of the body
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous
forward voltage (1)
IF = 0.5 A
IF = 1.0 A
TJ = 25 °C
VF
0.39
0.44
-
0.50
V
IF = 0.5 A
IF = 1.0 A
TJ = 125 °C
0.28
0.35
-
0.40
Maximum reverse current (2)
rated VR
TJ = 25 °C
TJ = 125 °C
IR
15
6.0
250
20
A
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
65
-
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MSS1P2L
MSS1P3L
UNIT
Typical thermal resistance (1)
RθJA
RθJL
RθJC
125
30
40
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MSS1P3L-E3/89A
0.006
89A
4500
7" diameter plastic tape and reel
MSS1P3L-G3/89A
0.006
89A
4500
7" diameter plastic tape and reel
Figure 1. Maximum Forward Current Derating Curve
A
v
er
age
F
o
rw
ard
Rectified
C
u
rr
ent
(A)
Lead Temperature (°C)
0
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
Resistive or Inductive Load
T
L Measured
at the Cathode Band Terminal
Figure 2. Forward Power Loss Characteristics
0.5
0.4
0.3
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
相關(guān)PDF資料
PDF描述
MSS1P5 1 A, 50 V, SILICON, SIGNAL DIODE
MSS1P6-G3/89A 1 A, 60 V, SILICON, SIGNAL DIODE
MSS1P6-E3/89A 1 A, 60 V, SILICON, SIGNAL DIODE
MSS2P2-M3/89A 2 A, 20 V, SILICON, RECTIFIER DIODE
MSS50,PCR53-B47 SILICON, MIXER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSS1P3LHM3/89A 制造商:Vishay Semiconductors 功能描述:1A,30V,SM SCHOTTKY RECT.
MSS1P3LM3/89A 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 1A 2-Pin Micro SMP T/R 制造商:Vishay 功能描述:Diode Schottky 30V 1A 2-Pin Micro SMP T/R
MSS1P3L-M3/89A 功能描述:肖特基二極管與整流器 1.0 Amp 30 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MSS1P3-M3/89A 功能描述:肖特基二極管與整流器 1.0 Amp 30 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MSS1P3U 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Ultra Low VF Surface Mount Schottky Barrier Rectifiers
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*