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參數(shù)資料
| 型號(hào)： | MSS1P3-M3/89A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, MICROSMP-2 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | MSS1P3-M3/89A |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 89019
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MSS1P3, MSS1P4
Vishay General Semiconductor
New Product
Note
(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas RJL is measured
at the terminal of cathode band. RJC is measured at the top center of the body
Note
(1) Automotive grade
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MSS1P3
MSS1P4
UNIT
Typical thermal resistance
RJA (1)
125
°C/W
RJL (1)
30
RJC (1)
40
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MSS1P4-M3/89A
0.006
89A
4500
7" diameter plastic tape and reel
MSS1P4HM3/89A (1)
0.006
89A
4500
7" diameter plastic tape and reel
A
verage
Forwar
d
Rectified
Cur
rent
(A)
Lead Temperature (°C)
0
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
Resistive or Inductive Load
T
L Measured
at the Cathode Band Terminal
0.5
0.6
0.4
0.3
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
10
1
0.1
0.01
0.1
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Instantaneous Forward Voltage (V)
Instantaneous
F
o
rw
ard
Current
(A)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
100
10
20
30
40
50
60
70
80
90
100
1
0.1
0.01
0.001
Percent of Rated Peak Reverse Voltage (%)
Instantaneous
Re
v
erse
Current
(mA)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSS1P3U | 1 A, 30 V, SILICON, SIGNAL DIODE |
| MSS30,154-B10B | SILICON, LOW BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| MSS30,154-H20 | SILICON, LOW BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| MSS30,454-B40 | SILICON, LOW BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| MSS30,148-E25 | SILICON, LOW BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSS1P3U | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Ultra Low VF Surface Mount Schottky Barrier Rectifiers |
| MSS1P3U-M3/89A | 功能描述:肖特基二極管與整流器 1.0 Amp 30 Volt 30 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MSS1P4 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Surface Mount Schottky Barrier Rectifiers |
| MSS1P4-E3/89A | 功能描述:肖特基二極管與整流器 1.0 Amp 40 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MSS1P4HM3/89A | 制造商:Vishay Semiconductors 功能描述:1A,40V,SM SCHOTTKY RECT. |
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