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參數(shù)資料
| 型號(hào)： | MSS1P3-E3/89A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, MICROSMP, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 103K |
| 代理商： | MSS1P3-E3/89A |
New Product
MSS1P3 & MSS1P4
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89019
Revision: 04-Aug-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 6.0 x 6.0 mm copper pad areas
RθJL is measured at the terminal of cathode band. RθJC is measured at the top center of the body
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous
forward voltage (1)
IF = 0.5 A
IF = 1.0 A
TJ = 25 °C
VF
0.41
0.48
-
0.55
V
IF = 0.5 A
IF = 1.0 A
TJ = 125 °C
0.32
0.41
-
0.46
Maximum reverse current (2)
rated VR
TJ = 25 °C
TJ = 125 °C
IR
8.5
4.5
200
15
A
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
50
-
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MSS1P3
MSS1P4
UNIT
Typical thermal resistance (1)
RθJA
RθJL
RθJC
125
30
40
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MSS1P4-E3/89A
0.006
89A
4500
7" diameter plastic tape and reel
MSS1P4-M3/89A
0.006
89A
4500
7" diameter plastic tape and reel
Figure 1. Maximum Forward Current Derating Curve
A
v
er
age
F
o
rw
ard
Rectified
C
u
rr
ent
(A)
Lead Temperature (°C)
0
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
Resistive or Inductive Load
T
L Measured
at the Cathode Band Terminal
Figure 2. Forward Power Loss Characteristics
0.5
0.6
0.4
0.3
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSS1P3L-G3/89A | 1 A, 30 V, SILICON, SIGNAL DIODE |
| MSS1P5 | 1 A, 50 V, SILICON, SIGNAL DIODE |
| MSS1P6-G3/89A | 1 A, 60 V, SILICON, SIGNAL DIODE |
| MSS1P6-E3/89A | 1 A, 60 V, SILICON, SIGNAL DIODE |
| MSS2P2-M3/89A | 2 A, 20 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSS1P3HM3/89A | 制造商:Vishay Semiconductors 功能描述:1A,30V,SM SCHOTTKY RECT. |
| MSS1P3L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Schottky Barrier Rectifiers |
| MSS1P3L-E3/89A | 功能描述:肖特基二極管與整流器 1.0 Amp 30 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MSS1P3LHM3/89A | 制造商:Vishay Semiconductors 功能描述:1A,30V,SM SCHOTTKY RECT. |
| MSS1P3LM3/89A | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 1A 2-Pin Micro SMP T/R 制造商:Vishay 功能描述:Diode Schottky 30V 1A 2-Pin Micro SMP T/R |
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