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參數(shù)資料
| 型號(hào)： | MSPSMBG26 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 520K |
| 代理商： | MSPSMBG26 |
SURFACE MOUNT 600 Watt
Transient Voltage Suppressor
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4
Copyright
2002
6-01-2004 REV E
W
.Mi
cr
os
em
i
.C
O
M
SCOTTSD A L E DIVISION
SMBJ5.0 thru SMBJ170CA
and SMBG5.0 thru SMBG170CA
SMB
5.0
–
170V
GRAPHS
P
PP
–
Peak
Pulse
Po
w
er
–
kW
TC = 25
oC
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
10,000
Test waveform parameters: tr=10
s, tp=1000 s
tw – Pulse Width -
s
FIGURE 2
FIGURE 1
Pulse Waveform for
Peak Pulse Power vs. Pulse Time
Exponential Surge
TL Lead Temperature
oC
V(BR) - Breakdown Voltage – Volts
FIGURE 3 - Derating Curve
FIGURE 4
Typical Capacitance vs. Breakdown
PAD LAYOUT
INCHES
mm
A
.260
6.60
B
.085
2.16
C
.110
2.79
INCHES
mm
A
0.320
8.13
B
0.085
2.16
C
0.110
2.79
SMBJ
SMBG
Voltage
C
–
Ca
pa
cita
nce
-
Pi
cofarads
Peak
Pulse
Power
(
P
PP
)or
conti
nuous
Power
in
Percent
of
25
o C
Ratin
g
PACKAGE DIMENSIONS
A
B
C
D
E
F
K
L
MIN
.077
.160
.130
.205
.075
.235
.015
.030
MAX
.083
.180
.155
.220
.095
.255
.030
.060
DIMENSIONS IN MILLIMETERS
MIN
1.96
4.06
3.30
5.21
1.90
5.97
.381
.760
MAX
2.10
4.57
3.94
5.59
2.41
6.48
.762
1.520
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