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參數(shù)資料
| 型號(hào)： | MSP6629 |
| 廠(chǎng)商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 1.15 A, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS, E, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 243K |
| 代理商： | MSP6629 |
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2007
4-27-2007 REV C
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6626 thru 1N6631
1N6626
thru
1N6631
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/590 and is ideal for high-reliability applications where a failure cannot be
tolerated.
These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including standard, fast and ultrafast
device types in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N6626 to 1N6631 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/590
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “MSP” prefix, e.g.
MSP6626, MSP6629, etc.
Surface mount equivalents also available in a square end-
cap MELF configuration with “US” suffix (see separate
data sheet for 1N6626US thru 1N6631US)
Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction Temperature: -65
oC to +175oC
Storage Temperature: -65
oC to +175oC
Peak Forward Surge Current @ 25
oC: 75A (except
1N6631 which is 60A)
Note: Test pulse = 8.3ms, half-sine wave.
Average Rectified Forward Current (IO) at TL= +75
oC
(L=.375 inch from body):
1N6626 thru 1N6628
2.3 A
1N6629 thru 1N6631
1.8 A
(Derate IO linearly at 1.0%/
oC for T
L> +75
oC)
Average Rectified Forward Current (IO) at TA=25
oC:
1N6626 thru 1N6628
1.55 A
1N6629 thru 1N6631
1.15 A
(Derate IO linearly at 0.67%/
oC for T
A>+25
oC. This I
O
rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled
where TJ(max) is not exceeded. See MIL-PRF-19500/590)
Thermal Resistance L= 0.375 inch (RθJL): 22
oC/W
Capacitance at VR= 10 V: 40 pF
Solder temperature: 260
oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead
(Sn/Pb) over Copper.
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
See package dimensions on last page
“E” Package
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