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參數(shù)資料
| 型號(hào)： | MSP5.0AHE3/89A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 100 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, MICROSMP, 2 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | MSP5.0AHE3/89A |
New Product
MSP5.0A
Vishay General Semiconductor
Document Number: 88487
Revision: 16-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Pulse Waveform
Figure 2. Peak Pulse Power Rating Curve
Figure 3. Relative Variation of Leakage Current vs.
Junction Temperature
0
50
100
150
1.0
2.0
3.0
4.0
t
r = 10 s
t
r = 8 s
t
d = 1000 s
t
d = 20 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
t
d
I PPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
0.1
0.01
0.1
1
10
100
1
10
100
1000
10 000
P
PPM
-
P
eak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
40
30
20
10
0
25
50
75
100
125
150
Re
v
erse
Leakage
C
u
rrent
(
A)
TJ - Junction Temperature (°C)
Figure 4. Typical Peak Forward Voltage Drop vs.
Peak Forward Current
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
10
100
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF - Forward Voltage Drop (V)
Pe
a
k
F
o
rw
ard
C
u
rrent
(A)
T
J = 150 °C
T
J = 25 °C
200
300
400
500
600
700
800
1
02
3
4
Reverse Voltage (V)
C
J-
J
u
nction
Capacitance
(pF)
1000
100
10
1
0.1
0.01
1
10
100
1000
t - Pulse Duration (s)
T
ransient
Ther
mal
Imped
ance
(
°C/
W
)
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