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| 型號： | MSP430F5638IPZR |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 16-BIT, FLASH, 20 MHz, RISC MICROCONTROLLER, PQFP100 |
| 封裝： | GREEN, PLASTIC, LQFP-100 |
| 文件頁數(shù)： | 66/101頁 |
| 文件大?。?/td> | 1073K |
| 代理商： | MSP430F5638IPZR |
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PRODUCTPREVIEW
MSP430F563x
www.ti.com
SLAS650A – JUNE 2010 – REVISED JULY 2010
USB-PWR (USB Power System)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VLAUNCH
VBUS detection threshold
3.75
V
VBUS
USB bus voltage
Normal operation
3.76
5.5
V
VUSB
USB LDO output voltage
3.3
±9%
V
V18
Internal USB voltage(1)
1.8
V
Maximum external current from VUSB
IUSB_EXT
USB LDO is on
12
mA
terminal(2)
IDET
USB LDO current overload detection(3)
60
100
mA
USB LDO is on,
ISUSPEND
Operating supply current into VBUS terminal.(4)
250
A
USB PLL disabled
CBUS
VBUS terminal recommended capacitance
4.7
F
CUSB
VUSB terminal recommended capacitance
220
nF
C18
V18 terminal recommended capacitance
220
nF
Within 2%,
tENABLE
Settling time VUSB and V18
2
ms
recommended capacitances
RPUR
Pullup resistance of PUR terminal
70
110
150
(1)
This voltage is for internal usages only. No external DC loading should be applied.
(2)
This represents additional current that can be supplied to the application from the VUSB terminal beyond the needs of the USB
operation.
(3)
A current overload will be detected when the total current supplied from the USB LDO, including IUSB_EXT, exceeds this value.
(4)
Does not include current contribution of Rpu and Rpd as outlined in the USB specification.
USB-PLL (USB Phase Locked Loop)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
IPLL
Operating supply current
7
mA
fPLL
PLL frequency
48
MHz
fUPD
PLL reference frequency
1.5
3
MHz
tLOCK
PLL lock time
2
ms
tJitter
PLL jitter
1000
ps
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
TEST
PARAMETER
MIN
TYP
MAX
UNIT
CONDITIONS
DVCC(PGM/ERASE) Program and erase supply voltage
1.8
3.6
V
IPGM
Average supply current from DVCC during program
3
5
mA
IERASE
Average supply current from DVCC during erase
2
mA
IMERASE, IBANK
Average supply current from DVCC during mass erase or bank erase
2
mA
tCPT
Cumulative program time
See (1)
16
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
See (2)
64
85
s
tBlock, 0
Block program time for first byte or word
See (2)
49
65
s
Block program time for each additional byte or word, except for last
tBlock, 1–(N–1)
See (2)
37
49
s
byte or word
tBlock, N
Block program time for last byte or word
See (2)
55
73
s
(1)
The cumulative program time must not be exceeded when writing to a 128-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2)
These values are hardwired into the flash controller's state machine.
Copyright 2010, Texas Instruments Incorporated
67
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