參數(shù)資料
型號(hào): MSP430C325IFN
廠(chǎng)商: TEXAS INSTRUMENTS INC
元件分類(lèi): 微控制器/微處理器
英文描述: 16-BIT, OTPROM, 3.3 MHz, RISC MICROCONTROLLER, PQCC68
封裝: PLASTIC, LCC-68
文件頁(yè)數(shù): 14/35頁(yè)
文件大?。?/td> 511K
代理商: MSP430C325IFN
MSP430C32x, MSP430P325A
MIXED SIGNAL MICROCONTROLLER
SLAS219B MARCH 1999 REVISED MARCH 2000
21
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 772511443
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted) (continued)
JTAG
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
f
TCK frequency
VCC = 3 V
DC
5
MHz
f(TCK)
JTAG/Test
TCK frequency
VCC = 5 V
DC
10
MHz
R(TEST)
JTAG/Test
Pullup resistors on TMS, TCK, TDI
(see Note 20)
VCC = 3 V/ 5 V
25
60
90
k
Ω
Fuse blow voltage, C versions (see Note 22)
VCC = 3 V/ 5 V
5.5
6
V(FB)
JTAG/Fuse (see Note 21)
Fuse blow voltage, E/P versions
(see Note 22)
VCC = 3 V/ 5 V
11
12
V
I(FB)
JTAG/Fuse (see Note 21)
Supply current on TDI to blow fuse
100
mA
t(FB)
Time to blow the fuse
1
ms
V(PP)
Programming voltage, applied to TDI/VPP
12
12.5
13
V
I(PP)
Current from programming voltage source
70
mA
t(pps)
EPROM (E) and OTP(P)
Programming time, single pulse
5
ms
t(ppf)
EPROM (E) and OTP(P)
versions only
Programming time, fast algorithm
100
s
Pn
Number of pulses for successful programming
4
100
μs
Data retention TJ < 55°C
10
year
t(erase)
EPROM (E) versions only
Erase time wave length 2537 at 15 Ws/cm2
(UV lamp of 12 mW/ cm2)
30
min
EPROM (E) versions only
Write/Erase cycles
1000
cycles
NOTES: 20. The TMS and TCK pullup resistors are implemented in all C-, P-, and E-versions. The pullup resistor on TDI is implemented in
C-versions only.
21. Once the JTAG fuse is blown, no further access to the MSP430 JTAG/test feature is possible. The JTAG block switches to by-pass
mode.
22. The voltage supply to blow the JTAG fuse is applied to TDI/VPP pin when fuse blowing is desired.
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