參數(shù)資料
型號(hào)： MSM5716C50
廠商： OKI SEMICONDUCTOR CO., LTD.
英文描述： 2M×8 Dynamic RAM(2M×8動(dòng)態(tài)RAM)
中文描述： 200萬(wàn)× 8動(dòng)態(tài)RAM（2米× 8動(dòng)態(tài)內(nèi)存）
文件頁(yè)數(shù)： 1/45頁(yè)
文件大小： 613K
代理商： MSM5716C50
Semiconductor
MSM5716C50/MSM5718C50/
MD5764802
This version: Jun. 1998
Previous version: Oct. 1997
1/45
16M/18Mb (2M
￥
8/9) & 64Mb (8M
￥
8) Concurrent RDRAM
DESCRIPTION
The 16/18/64-Megabit Concurrent Rambus DRAMs (RDRAM) are extremely high-speed
CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited
lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL)
technology permits 600 MHz transfer rates while using conventional system and board design
methodologies. Low effective latency is attained by operating the two or four 2KB sense amplifiers
as high speed caches, and by using random access mode (page mode) to facilitate large block
transfers. Concurrent (simultaneous) bank operations permit high effective bandwidth using
interleaved transactions.
RDRAMs are general purpose high-performance memory devices suitable for use in a broad range
of applications including PC and consumer main memory, graphics, video, and any other
application where high-performance at low cost is required.
FEATURES
Compatible with Base/LL RDRAMs
600 MB/s peak transfer rate per RDRAM
Rambus Signaling Level (RSL) interface
Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers
480 MB/s effective bandwidth for random 32 byte transfers from one RDRAM
13 active signals require just 32 total pins on the controller interface (including power)
3.3 V operation
Additional/multiple Rambus Channels each provide an additional 600 MB/s bandwidth
Two or four 2KByte sense amplifiers may be operated as caches for low latency access
Random access mode enables any burst order at full bandwidth within a page
Graphics features include write-per-bit and mask-per-bit operations
Available in horizontal surface mount plastic package (SHP32-P-1125-0.65-K)
Peimnay
E2G1059-18-63
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