參數(shù)資料
型號: MSM54V32126A-60GS-K
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
中文描述: 131,072字× 32位動態(tài)隨機存儲器:快速頁面模式型與江戶
文件頁數(shù): 7/26頁
文件大?。?/td> 310K
代理商: MSM54V32126A-60GS-K
7/26
Semiconductor
MSM54V32126A
AC Characteristics (2/2)
Parameter
Symbol
Note
Unit
t
DS
t
DH
t
RWD
t
AWD
t
CWD
t
DZC
t
DZO
t
OEA
t
OEZ
t
OEH
t
ROH
t
OCH
t
CHO
t
OEP
t
WPE
t
CSR
t
CHR
t
RPC
t
CPT
t
REF
t
RASS
Max.
20
Min.
40
10
10
10
3
Max.
20
Min.
35
9
9
9
3
MSM54V32126A
-60
MSM54V32126A
-50
t
DHR
t
OED
t
RPS
t
CHS
Column Address to
WE
Delay Time
CAS
to
WE
Delay Time
Data to
CAS
Delay Time
Data to
OE
Delay Time
Access Time from
OE
Output Buffer Turn-off Delay Time from
OE
CAS
Hold Time for
CAS
before
RAS
Cycle
RAS
Precharge to
CAS
Active Time
CAS
Precharge Time (Refresh Counter Test)
CAS
Set-up Time for
CAS
before
RAS
Cycle
Data Hold Time
Data Hold Time referenced to
RAS
OE
to Data-in Delay Time
Data Set-up Time
CAS
H
old Time (
CAS
before
RAS
Self-Refresh)
OE
Command Hold Time
RAS
Hold Time referenced to
OE
OE
"L" to
CAS
"H" Lead Time
CAS
"H" to
OE
"L" Lead Time
OE
Precharge Time
WE
Pulse Width (Output Disable)
Refresh Period
RAS
Pulse Width (
CAS
before
RAS
Self-Refresh)
RAS
to
WE
Delay Time
RAS
Precharge Time
(
CAS
before
RAS
Self-Refresh)
ns
ns
0
0
8
ns
ns
ns
ns
40
0
0
35
0
0
ns
ns
ns
ns
ns
ns
ns
20
3
20
3
9
10
10
10
10
10
ns
ns
ns
ns
10
10
10
30
8
8
10
25
ns
ns
80
50
70
45
ms
m
s
8
8
100
100
ns
ns
40
12
35
12
18
15
10
12
10
10
12
12
130
110
0
0
8
8
ns
ns
10
7, 12
7, 12
8
t
WCR
t
WP
t
RWL
t
CWL
t
WEZ
Write Command to
CAS
Lead Time
Output Buffer Turn-off Delay Time from
WE
Write Command to
RAS
Lead Time
Write Command Hold Time referenced to
RAS
Write Command Pulse Width
ns
ns
ns
ns
ns
5
5
MSM54V32126A
-45
Max.
20
Min.
30
8
8
8
3
0
7
32
0
0
20
3
8
6
6
65
42
8
100
30
12
13
10
20
10
10
10
10
10
100
0
14
15
12
13
12
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3
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PDF描述
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