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參數(shù)資料
| 型號(hào)： | MSM54C864-70ZS |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 65,536-Word X 8-Bit Multiport DRAM |
| 中文描述： | 65,536字× 8位多端口內(nèi)存 |
| 文件頁數(shù)： | 6/33頁 |
| 文件大?。?/td> | 368K |
| 代理商： | MSM54C864-70ZS |
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Semiconductor
MSM54C864
6/33
AC Characteristics (1/3)
Parameter
Symbol
Note
Unit
ns
ns
180
235
150
195
—
—
140
195
ns
ns
ns
ns
50
25
50
20
40
25
45
20
35
20
40
20
—
—
—
0
ns
ns
ns
35
—
10k
3
35
—
10k
3
35
—
10k
3
ns
ns
ns
100k
—
—
100
25
100
100k
—
—
80
25
80
100k
—
—
70
20
70
t
RC
t
RWC
t
PRWC
t
RAC
t
AA
t
CAC
t
CPA
t
OFF
t
T
t
RP
t
RAS
t
RASP
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
RAL
t
CRP
t
CPN
Max.
—
—
Min.
Max.
—
—
Min.
Max.
Min.
-10
-80
-70
ns
ns
100
—
90
—
—
70
90
—
ns
ns
ns
ns
ns
ns
10k
75
50
—
—
—
25
20
20
55
10
10
10k
55
40
—
—
—
25
20
15
40
10
10
10k
50
35
—
—
—
20
20
15
35
10
10
13
13
ns
55
50
—
45
t
PC
100
80
9
6
0
0
70
100
60
80
60
70
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
t
RCS
t
RCH
t
RRH
t
WCH
t
WCR
t
WP
t
RWL
t
CWL
0
10
0
15
70
0
0
0
15
70
15
25
25
0
10
0
15
55
0
0
0
15
55
15
20
20
0
10
0
15
55
0
0
0
15
55
15
20
20
10
10
7, 13
7, 14
7, 14
7, 13
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
CP
10
10
10
ns
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Access Time from Column Address
Access Time from
CAS
Access Time from
CAS
Precharge
Output Buffer Turn-off Delay
Transition Time (Rise and Fall)
Column Address Hold Time referenced to
RAS
Read Command Set-up Time
Column Address Set-up Time
Column Address Hold Time
Row Address Set-up Time
Row Address Hold Time
CAS
Pulse Width
RAS
to
CAS
Delay Time
RAS
to Column Address Delay Time
Column Address to
RAS
Lead Time
CAS
Precharge Time (Fast Page Mode)
CAS
to
RAS
Precharge Time
CAS
Precharge Time
CAS
Hold Time
Write Command to
CAS
Lead Time
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write Cycle Time
Access Time from
RAS
RAS
Pulse Width (Fast Page Mode Only)
RAS
Hold Time
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Read Command Hold Time
Read Command Hold Time referenced to
RAS
Write Command Hold Time
RAS
Precharge Time
RAS
Pulse Width
Write Command to
RAS
Lead Time
Write Command Hold Time referenced to
RAS
Write Command Pulse Width
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C) Note 4, 5, 6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSM54C864-80 | 65,536-Word X 8-Bit Multiport DRAM |
| MSM54C864-80JS | 65,536-Word X 8-Bit Multiport DRAM |
| MSM54C864-80ZS | 65,536-Word X 8-Bit Multiport DRAM |
| MSM54C865 | 65,536-Word X 8-Bit Multiport DRAM |
| MSM54C865-10 | 65,536-Word X 8-Bit Multiport DRAM |
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|---|---|
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| MSM54V12222B-25JSDR1 | 制造商:ROHM Semiconductor 功能描述: |
| MSM54V12222B-25T3-K7 | 制造商:ROHM Semiconductor 功能描述: |
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