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參數(shù)資料
| 型號(hào)： | MSM548512L-12RS |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 524,288-Word X 8-Bit High-Speed PSRAM |
| 中文描述： | 524,288字× 8位高速移動(dòng)存儲(chǔ)芯片 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 172K |
| 代理商： | MSM548512L-12RS |
Semiconductor
MSM548512L
6/12
AC Characteristics
Measurement condition:
Input pulse level ........................... V
IH
= 2.4 V, V
IL
= 0.4 V
Output reference level.................. V
OH
= 2.0 V, V
OL
= 0.8 V
Rising and falling time................. 5 ns
Output load .................................... 1 TTL + 100 pF
Input timing reference level........ High = 2.2 V, Low = 0.8 V
Parameter
Symbol
MSM548512L
-12
Note
t
RC
t
RWC
t
CEA
t
OEA
t
CHZ
t
CLZ
t
OHZ
t
OLZ
t
CE
t
P
t
AS
t
AH
t
RCS
t
RCH
t
OHC
t
OCD
Random Read Write Cycle Time
Random Read Modify Write Cycle Time
CE
Access Time
OE
Access Time
Chip Disable to Output in High-Z
CE
to Output in Low-Z
OE
Disable to Output in High-Z
OE
Output in Low-Z
CE
Pulse Width
CE
Precharge Time
Address Set-up Time
Address Hold Time
Read Command Set-up Time
Read Command Hold Time
OE
Command Hold Time
OE
Delay Time
210
280
—
—
—
20
—
0
120n
80
0
30
0
0
15
0
Max.
Min.
—
—
120
50
30
—
30
—
10
m
—
—
—
—
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
s
ns
ns
ns
ns
ns
ns
ns
MSM548512L
-10
180
240
—
—
—
20
—
0
100n
70
0
25
0
0
15
0
Max.
Min.
—
—
100
30
30
—
25
—
10
m
—
—
—
—
—
—
—
MSM548512L
-80
160
220
—
—
—
20
—
0
80n
70
0
20
0
0
15
0
Max.
Min.
—
—
80
30
25
—
25
—
10
m
—
—
—
—
—
—
—
6
6
t
WP
t
CW
t
DW
t
DH
t
OW
t
WHZ
t
T
t
RFD
t
FP
t
FAP
t
FC
t
FAS
Write Command Pulse Width
Chip Enable Time
Input Data Set Time
Input Data Hold Time
Output Active from End of Write
Write Enable to Output in High-Z
Transition Time
RFSH
Delay Time from
CE
RFSH
Precharge Time
RFSH
Pulse Width (Auto-refresh)
Auto-refresh Cycle Time
RFSH
Pulse Width (Self-refresh)
35
120
30
0
5
—
3
80
40
80n
210
8
—
—
—
—
—
30
50
—
—
8
m
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
ns
m
s
30
100
25
0
5
—
3
70
40
80n
180
8
—
—
—
—
—
25
50
—
—
8
m
—
—
25
80
20
0
5
—
3
70
40
80n
160
8
—
—
—
—
—
20
50
—
—
8
m
—
—
6
11
t
RFS
CE
Delay Time from
RFSH
in Self-refresh Mode
600
—
ns
600
—
600
—
t
REF
Refresh Period (2048 cycle/32 ms)
—
32
ms
—
32
—
32
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
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