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參數(shù)資料
| 型號： | MSM548128BL |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 131,072-Word ×8-Bit High-Speed PSRAM(128k字×8位高速偽靜態(tài)RAM) |
| 中文描述： | 131,072詞× 8位高速移動(dòng)存儲芯片（128K的字× 8位高速偽靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 181K |
| 代理商： | MSM548128BL |
Semiconductor
MSM548128BL
4/12
FUNCTION TABLE
CS (
CE
Low)
H
H
H
L
CE
L
L
L
L
WE
H
L
H
X
Mode
Read
Write
—
CS Standby
I/O Pin
Low-Z
High-Z
High-Z
High-Z
H
H
RFSH
X
X
X
X
OE
L
X
H
X
X
X
L
H
X
X
X
X
High-Z
High-Z
Refresh
Standby
L : Low Level Input
H : High Level Input
X : Don’t Care
Absolute Maximum Ratings
ELECTRICAL CHARACTERISTICS
Voltage on Any Pin from V
SS
*1
Power Dissipation
Operating Temperature
Storage Temperature
Storage Temperature (biased)
Short Circuit Output Current
Parameter
Symbol
V
T
P
D
T
opr
T
stg
T
bias
I
OS
Unit
V
W
°C
°C
°C
mA
Rating
–1.0 to 7.0
1.0
0 to 70
–55 to 125
–10 to 85
50
Recommended Operating Conditions
Parameter
Power Supply Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Unit
V
V
V
V
Max.
5.5
0
6.0
0.8
Typ.
5.0
0
—
—
Min.
4.5
0
2.4
–0.5
Input Voltage
(Ta = 0°C to 70°C)
*1
To V
SS
Note:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to the conditions as detailed
in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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