參數(shù)資料
型號(hào)： MSM5432126A-40
廠商： OKI SEMICONDUCTOR CO., LTD.
英文描述： 131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
中文描述： 131,072字× 32位動(dòng)態(tài)隨機(jī)存儲(chǔ)器：快速頁(yè)面模式型與江戶
文件頁(yè)數(shù)： 8/24頁(yè)
文件大?。?/td> 278K
代理商： MSM5432126A-40
8/24
Semiconductor
MSM5432126A
Notes:
1. An initial pause of 200
m
s is required after power-up followed by any 8
RAS
cycles
(Example :
RAS
only refresh) before proper device operation is achieved. In case
of using internal refresh counter, a minimum of 8
CAS
before
RAS
cycles instead
of 8
RAS
cycles are required.
2. The AC characteristics assume at t
T
= 3 ns.
3. V
IH
(Min.) and V
IL
(Max.) are reference levels for measuring timing of input
signals. Also, transition times are measured between V
IH
and V
IL
. Input levels at
the AC testing are 3.0 V/0 V.
4. Data outputs are measured with a load of 30 pF.
DOUT reference levels : V
OH
/V
OL
= 2.0 V/0.8 V.
5. t
REZ
(Max.), t
CEZ
(Max.), t
WEZ
(Max.) and t
OEZ
(Max.) define the time at which the
outputs achieve the open circuit condition and are not referenced to output voltage
levels. This parameter is sampled and not 100% tested.
6. Either t
RCH
or t
RRH
must be satisfied for a read cycle.
7. These parameters are referenced to
CAS
leading edge of early write cycles and to
WE
leading edge in
OE
controlled write cycles and read modify write cycles.
8. t
WCS
, t
RWD
, t
CWD
and t
AWD
are not restrictive operating parameters. They are
included in the data sheet as electrical characteristics only. If t
WCS
≥
t
WCS
(Min.),
the cycle is an early write cycle and the data out pin will remain open circuit
throughout the entire cycle; If t
RWD
≥
t
RWD
(Min.), t
CWD
≥
t
CWD
(Min.) and t
AWD
≥
t
AWD
(Min.), the cycle is a read modify write cycle and the data out will contain
data read from the selected cell: If neither of the above sets of conditions is satisfied,
the condition of the data out is indeterminate.
9. Operation within the t
RCD
(Max.) limit ensures that t
RAC
(Max.) can be met. t
RCD
(Max.) is specified as a reference point only: If t
RCD
is greater than the specified
t
RCD
(Max.) limit, then access time is controlled by t
CAC
.
10. Operation within the t
RAD
(Max.) limit ensures that t
RAC
(Max.) can be met. t
RAD
(Max.) is specified as a reference point only: If t
RAD
is greater than the specified
t
RAD
(Max.) limit, then access time is controlled by t
AA
.
11. This is guaranteed by design. (t
DOH
= t
CAC
- output transition time) This parameter
is not 100% tested.
12. These parameters are determined by the earliest falling edge of
CAS1
,
CAS2
,
CAS3
, or
CAS4
.
13. These parameters are determined by the latest rising edge of
CAS1
,
CAS2
,
CAS3
,
or
CAS4
.
14. t
CWL
should be satisfied by all
CAS
es.
15. t
CP
and t
CPT
are determined by the time that all
CAS
es are high.
相關(guān)PDF資料
PDF描述
MSM5432126A-40GS-K 131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
MSM5432126A-45 131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
MSM5432126A-45GS-K 131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
MSM5432126A-50 131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
MSM5432126A-50GS-K 131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSM548262-60JS 制造商:ROHM Semiconductor 功能描述:
MSM548262-60T3-K 制造商:ROHM Semiconductor 功能描述:
MSM548262-60TK 制造商:OK International 功能描述:
MSM548262-60TS-K 制造商:ROHM Semiconductor 功能描述:
MSM548262-70JS 制造商:ROHM Semiconductor 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*