參數(shù)資料
型號(hào)： MSM5432126
廠商： OKI SEMICONDUCTOR CO., LTD.
英文描述： 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
中文描述： 131,072字× 32位動(dòng)態(tài)隨機(jī)存儲(chǔ)器：快速頁(yè)面模式型與江戶
文件頁(yè)數(shù)： 5/24頁(yè)
文件大小： 293K
代理商： MSM5432126
5/24
Semiconductor
MSM5432126/8
DC Characteristics
Average Power
Supply Current
(
CAS
before
RAS
Refresh)
RAS
= cycling,
CAS
before
RAS
1, 2, 4
mA
130
140
—
—
I
CC5
Average Power
Supply Current
(Fast Page Mode)
RAS
= V
IL
,
CAS
cycling,
t
HPC
= Min.
1, 2, 4
160
165
—
—
I
CC4
mA
Input Leakage Current
Output High Voltage
Output Low Voltage
Condition
Note
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Output Leakage Current
Unit
Average Power
Supply Current
(
RAS
Only Refresh)
Parameter
I
OH
= –0.1 mA
I
OL
= 0.1 mA
0 V
<
V
IN
<
V
CC
;
All other pins not
under test = 0 V
0 V
<
V
OUT
<
5.5 V
Output Disable
RAS
,
CAS
cycling,
t
RC
= Min.
RAS
≥
V
CC
– 0.2 V,
CAS
≥
V
CC
– 0.2 V
RAS
= cycling,
CAS
= V
IH
,
t
RC
= Min.
V
V
m
A
m
A
1, 2, 3
mA
mA
1, 2, 3
mA
Max.
V
CC
0.8
10
10
130
2
130
Min.
2.0
0
–10
–10
—
Max.
V
CC
0.8
10
10
140
2
140
Min.
2.0
0
–10
–10
—
—
—
—
—
Symbol
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
MSM5432126/8
-60
MSM5432126/8
-50
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
150
—
170
—
Max.
V
CC
0.8
10
10
150
2
150
Min.
2.0
0
–10
–10
—
—
—
MSM5432126/8
-45
Notes:
1. Specified values are obtained with minimum cycle time.
2. I
CC
is dependent on output loading. Specified values are obtained with the output
open.
3. Address can be changed once or less while
RAS
= V
IL
.
4. Address can be changed once or less while
CAS
= V
IH
.
相關(guān)PDF資料
PDF描述
MSM5432128 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
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