參數(shù)資料
型號(hào)： MSM5416282
廠(chǎng)商： OKI SEMICONDUCTOR CO., LTD.
英文描述： 262,144-Word ×16-Bit Multiport DRAM(256k字×16位多端口動(dòng)態(tài)RAM)
中文描述： 262,144字× 16位多端口內(nèi)存（256k字× 16位多端口動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 32/37頁(yè)
文件大小： 366K
代理商： MSM5416282
Semiconductor
MSM5416282
32/37
Block Write:
RAS
falling edge ---
CAS
=
TRG
= "H", DSF = "L"
CAS
falling edge --- DSF = "H"
Block write allows for the data in the color register to be written into 8 consecutive column
address locations, starting from a selected column address in a selected row.
The block write operation can be selectively controlled on an I/O basis, and a column mask
capability is also available. This function is implemented as lower byte and upper byte. During
a block write cycle, the 3 least significant column address locations (A0C, A1C and A2C) are
internally controlled, and only the 6 most significant column addresses (A3C - A8C) are latched
at the falling edge of
CAS
.
1) No mask block write:
WEL
and
WEU
"high" at the falling edge of
RAS
The data on 16 DQ pins is cleared by the data of the color register.
2) Masked block write:
WEL
or
WEU
"low" at the falling edge of
RAS
The mask data is the same as that of a RAM write cycle. (new mask and persistent mask)
1
1
*
*
1
*
*
1
D
8 Column
￥
8 DQ (Lower Byte)
Note : Location "*" can not be loaded.
Color Register
I/O Mask
Column Mask
11001110
11111010
10010011
Lower Byte
Bit 0
Bit 15
Upper Byte
01110011
01101011
00111100
1
1
*
*
1
*
*
1
0
0
*
*
0
*
*
0
0
0
*
*
0
*
*
0
1
1
*
*
1
*
*
1
*
*
*
*
*
*
*
*
1
1
*
*
1
*
*
1
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
1
1
1
1
*
*
*
*
1
1
1
1
*
*
*
*
*
*
*
*
*
*
*
*
0
0
0
0
*
*
*
*
*
*
*
*
*
*
*
*
1
1
1
1
*
*
*
*
1
1
1
1
*
*
Column 7
Column 6
Column 5
Column 4
Column 3
Column 2
Column 1
Column 0
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
8 Column
￥
8 DQ (Upper Byte)
Example of Block Write
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