參數(shù)資料
型號: MSM521218
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 65,536-Word ×18-Bit CMOS STATIC RAM(64k字×18位靜態(tài)RAM)
中文描述: 65,536字× 18位的CMOS靜態(tài)RAM(64K的字× 18位靜態(tài)RAM)的
文件頁數(shù): 5/11頁
文件大?。?/td> 143K
代理商: MSM521218
5/11
Semiconductor
MSM521218
DC Characteristics
Input Leakage Current
I
LI
Symbol
V
IN
= 0 to V
CC
CE
= V
IH
or
OE
= V
IH
or
WE
= V
IL
or
UB
= V
IH
or
LB
= V
IH
,
V
OUT
= 0 to V
CC
Condition
Typ.
m
A
Unit
Parameter
–10
Min.
10
Max.
MSM521218
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C)
Output Leakage Current
I
LO
m
A
–10
10
Output High Voltage
Output Low Voltage
V
OH
V
OL
I
OH
= –2.0 mA
I
OL
= 2.0 mA
CE
V
CC
– 0.2 V,
V
IN
0.2 V or
V
IN
V
CC
– 0.2 V
CE
= V
IH
, Min. cycle
CE
= V
IL
,
Min. cycle,
I
OUT
= 0 mA
V
V
2.4
0.4
I
CCS
mA
2
I
CCS1
mA
20
Standby Power
Supply Current
Operating Power
Supply Current
I
CCA
mA
q
521218-20 230 mA
521218-25 210 mA
521218-30 190 mA
q
AC Characteristics
Test Conditions
Parameter
Condition
V
IH
= 3 V, V
IL
= 0 V
3 ns
1.4 V
See Figures
Input Pulse Level
Input Rise and Fall Times
Input/Output Timing Level
Output Load
D
OUT
30 pF
(Including scope and jig)
500
W
1.4 V
D
OUT
5 pF
(Including scope and jig)
500
W
1.4 V
Figure 1 Output Load
Figure 2 Output Load
(t
OLZ
, t
OHZ
, t
CLZ
, t
CHZ
, t
LBLZ
, t
LBHZ
, t
UBLZ
, t
UBHZ
, t
WLZ
, t
WHZ
)
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